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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STM32F030C8 датащи(PDF) 54 Page - STMicroelectronics |
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STM32F030C8 датащи(HTML) 54 Page - STMicroelectronics |
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54 / 88 page  Electrical characteristics STM32F030x4 STM32F030x6 STM32F030x8 54/88 DocID024849 Rev 1 6.3.10 Memory characteristics Flash memory The characteristics are given at TA = –40 to 85 °C unless otherwise specified. 6.3.11 EMC characteristics Susceptibility tests are performed on a sample basis during device characterization. Table 36. PLL characteristics Symbol Parameter Value Unit Min Typ Max fPLL_IN PLL input clock(1) 1. Take care to use the appropriate multiplier factors to obtain PLL input clock values compatible with the range defined by fPLL_OUT. 1(2) -24(2) MHz PLL input clock duty cycle 40(2) -60(2) % fPLL_OUT PLL multiplier output clock 16(2) -48 MHz tLOCK PLL lock time - - 200(2) 2. Guaranteed by design, not tested in production. µs JitterPLL Cycle-to-cycle jitter - - 300(2) ps Table 37. Flash memory characteristics Symbol Parameter Conditions Min Typ Max(1) 1. Guaranteed by design, not tested in production. Unit tprog 16-bit programming time TA–40 to +85 °C - 53.5 - µs tERASE Page (1 KB) erase time TA –40 to +85 °C - 30 - ms tME Mass erase time TA –40 to +85 °C - 30 - ms IDD Supply current Write mode - - 10 mA Erase mode - - 12 mA Vprog Programming voltage 2.4 - 3.6 V Table 38. Flash memory endurance and data retention Symbol Parameter Conditions Min(1) 1. Data based on characterization results, not tested in production. Unit NEND Endurance TA = –40 to +85 °C (6 suffix versions) 1 kcycles tRET Data retention 1 kcycle(2) at TA = 85 °C 2. Cycling performed over the whole temperature range. 20 Years |
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