M24256-BFDW6TP datasheet(25/40 Pages) STMICROELECTRONICS

25 / 40 page

M24256-BW M24256-BR M24256-BF M24256-DR M24256-DF

DC and AC parameters

Doc ID 6757 Rev 30

25/40

Table 13.

DC characteristics (M24256-BW, device grade 6)

Symbol

Parameter

Test conditions (in addition to those

in Table 6)

Min.

Max.

Unit

ILI

Input leakage current

(SCL, SDA, E2, E1,

E0)

VIN = VSS or VCC, device in Standby

mode

-± 2

µA

ILO

Output leakage

current

SDA in Hi-Z, external voltage applied

on SDA: VSS or VCC

-± 2

µA

ICC

Supply current (Read)

VCC = 2.5 V, fc = 400 kHz

(rise/fall time < 50 ns)

-1

VCC = 5.5 V, fc = 400 kHz

(rise/fall time < 50 ns)

-2

2.5 V < VCC < 5.5 V, fc = 1 MHz

(1)

(rise/fall time < 50 ns)

Only for devices operating at fC max = 1 MHz (see Table 17).

-2.5

ICC0

Supply current (Write) During tW, 2.5 V < VCC < 5.5 V

2(2)

Characterized value, not tested in production.

ICC1

Standby supply

current

Device not selected(3), VIN = VSS or

VCC, VCC = 2.5 V

The device is not selected after power-up, after a Read instruction (after the Stop condition), or after the

completion of the internal write cycle tW (tW is triggered by the correct decoding of a Write instruction).

-2

µA

Device not selected(3), VIN = VSS or

VCC, VCC = 5.5 V

-3

µA

VIL

Input low voltage

(SCL, SDA, WC)

–0.45

0.3 VCC

VIH

Input high voltage

(SCL, SDA)

0.7 VCC

6.5

Input high voltage

(WC, E2, E1, E0)

0.7 VCC VCC+0.6

VOL

Output low voltage

IOL = 2.1 mA, VCC = 2.5 V or

IOL = 3 mA, VCC = 5.5 V

-0.4

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