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MAX1632AEAI датащи(PDF) 21 Page - Maxim Integrated Products |
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MAX1632AEAI датащи(HTML) 21 Page - Maxim Integrated Products |
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21 / 29 page ![]() Multi-Output, Low-Noise Power-Supply Controllers for Notebook Computers ______________________________________________________________________________________ 21 where: on-state voltage drop VQ_ = ILOAD x RDS(ON) CRSS = MOSFET reverse transfer capacitance IGATE =DH driver peak output current capability (1A typical) 20ns = DH driver inherent rise/fall time Under output short circuit, the MAX1633A/MAX1634A/ MAX1635As’ synchronous rectifier MOSFET suffers extra stress because its duty factor can increase to greater than 0.9. It may need to be oversized to tolerate a continuous DC short circuit. During short circuit, the MAX1630A/MAX1631A/MAX1632As’ output undervolt- age shutdown protects the synchronous rectifier under output short-circuit conditions. To reduce EMI, add a 0.1µF ceramic capacitor from the high-side switch drain to the low-side switch source. Rectifier Clamp Diode The rectifier is a clamp across the low-side MOSFET that catches the negative inductor swing during the 60ns dead time between turning one MOSFET off and each low-side MOSFET on. The latest generations of MOSFETs incorporate a high-speed silicon body diode, which serves as an adequate clamp diode if efficiency is not of primary importance. A Schottky diode can be placed in parallel with the body diode to reduce the for- ward voltage drop, typically improving efficiency 1% to 2%. Use a diode with a DC current rating equal to one- third of the load current; for example, use an MBR0530 (500mA-rated) type for loads up to 1.5A, a 1N5819 type for loads up to 3A, or a 1N5822 type for loads up to 10A. The rectifier’s rated reverse breakdown voltage must be at least equal to the maximum input voltage, preferably with a 20% derating factor. Boost-Supply Diode D2 A signal diode such as a 1N4148 works well in most applications. If the input voltage can go below +6V, use a small (20mA) Schottky diode for slightly improved efficiency and dropout characteristics. Do not use large power diodes, such as 1N5817 or 1N4001, since high junction capacitance can pump up VL to excessive voltages. Rectifier Diode D3 (Transformer Secondary Diode) The secondary diode in coupled-inductor applications must withstand flyback voltages greater than 60V, which usually rules out most Schottky rectifiers. Common silicon rectifiers, such as the 1N4001, are also prohibited because they are too slow. This often makes fast silicon rectifiers such as the MURS120 the only choice. The flyback voltage across the rectifier is relat- ed to the VIN - VOUT difference, according to the trans- former turns ratio: where: N = the transformer turns ratio SEC/PRI VSEC = the maximum secondary DC output voltage VOUT = the primary (main) output voltage Subtract the main output voltage (VOUT) from VFLYBACK in this equation if the secondary winding is returned to VOUT and not to ground. The diode reverse breakdown rating must also accommodate any ringing due to leak- age inductance. D3’s current rating should be at least twice the DC load current on the secondary output. Low-Voltage Operation Low input voltages and low input-output differential voltages each require extra care in their design. Low absolute input voltages can cause the VL linear regula- tor to enter dropout and eventually shut itself off. Low input voltages relative to the output (low VIN-VOUT dif- ferential) can cause bad load regulation in multi-output flyback applications (see the design equations in the Transformer Design section). Also, low VIN-VOUT differ- entials can also cause the output voltage to sag when the load current changes abruptly. The amplitude of the sag is a function of inductor value and maximum duty factor (an Electrical Characteristics parameter, 98% guaranteed over temperature at f = 200kHz), as follows: The cure for low-voltage sag is to increase the output capacitor’s value. For example, at VIN = +5.5V, VOUT = +5V, L = 10µH, f = 200kHz, ISTEP = 3A, a total capaci- tance of 660µF keeps the sag less than 200mV. Note that only the capacitance requirement increases, and the ESR requirements do not change. Therefore, the added capacitance can be supplied by a low-cost bulk capacitor in parallel with the normal low-ESR capacitor. V= (I ) x L 2 x C x (V x D - V ) SAG STEP 2 OUT IN(MAX) MAX OUT V = V + (V - V ) x N FLYBACK SEC IN OUT |
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