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STD8NM50N датащи(PDF) 5 Page - STMicroelectronics

номер детали STD8NM50N
подробное описание детали  N-channel 500 V, 0.73 Ohm typ., 5 A MDmesh II Power MOSFET in DPAK, TO-220 and IPAK packages
PDF  19 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STD8NM50N датащи(HTML) 5 Page - STMicroelectronics

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STD8NM50N, STP8NM50N, STU8NM50N
Electrical characteristics
Doc ID 17413 Rev 6
5/19
Table 7.
Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max
Unit
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
VDD = 250 V, ID = 5 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 15)
-
7
4.4
25
8.8
-
ns
ns
ns
ns
Table 8.
Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD
ISDM
(1)
1.
Pulse width limited by safe operating area.
Source-drain current
Source-drain current (pulsed)
-
5
20
A
A
VSD
(2)
2.
Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Forward on voltage
ISD = 5 A, VGS = 0
-
1.5
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 5 A, di/dt = 100 A/µs
VDD = 60 V (see Figure 20)
-
187
1.3
14
ns
µC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 5 A, di/dt = 100 A/µs
VDD = 60 V, Tj = 150 °C
(see Figure 20)
-
224
1.5
13
ns
µC
A



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