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STD8NM50N датащи(PDF) 4 Page - STMicroelectronics

номер детали STD8NM50N
подробное описание детали  N-channel 500 V, 0.73 Ohm typ., 5 A MDmesh II Power MOSFET in DPAK, TO-220 and IPAK packages
PDF  19 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
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STD8NM50N датащи(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STD8NM50N, STP8NM50N, STU8NM50N
4/19
Doc ID 17413 Rev 6
2
Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 5.
On /off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
breakdown voltage
(VGS = 0)
ID = 1 mA
500
V
IDSS
Zero gate voltage
drain current (VGS = 0)
VDS = 500 V
VDS = 500 V, TC = 125 °C
1
100
µA
µA
IGSS
Gate-body leakage
current (VDS = 0)
VGS = ± 25 V
± 100
nA
VGS(th)
Gate threshold voltage VDS = VGS, ID = 250 µA
2
3
4
V
RDS(on)
Static drain-source on
resistance
VGS = 10 V, ID = 2.5 A
0.73
0.79
Ω
Table 6.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 50 V, f = 1 MHz,
VGS = 0
-
364
33
1.2
-
pF
pF
pF
Coss(eq)
(1)
1.
Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
Equivalent output
capacitance time
related
VDS = 0 to 50 V, VGS = 0
-
147.5
-
pF
RG
Intrinsic gate
resistance
f = 1 MHz open drain
-
5.4
-
Ω
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 400 V, ID = 5 A,
VGS = 10 V
(see Figure 16)
-
14
3
7
-
nC
nC
nC



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