145N65M5 datasheet(4/13 Pages) STMICROELECTRONICS

номер детали	145N65M5

подробное описание детали	N-channel 650 V, 0.012 廓 typ., 138 A, MDmesh??V Power MOSFET in Max247 package

PDF	13 Pages

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производитель	STMICROELECTRONICS [STMicroelectronics]

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Electrical characteristics

STY145N65M5

4/13

Doc ID 023718 Rev 2

Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 4.

On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

ID = 1 mA, VGS = 0

650

IDSS

Zero gate voltage

drain current (VGS = 0)

VDS = 650 V

VDS = 650 V, TC=125 °C

100

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ± 25 V

±100

VGS(th)

Gate threshold voltage VDS = VGS, ID = 250 µA

RDS(on)

Static drain-source on-

resistance

VGS = 10 V, ID = 69 A

0.012

0.015

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 100 V, f = 1 MHz,

VGS = 0

18500

413

Co(tr)

(1)

Co(tr) is a constant capacitance value that gives the same charging time as Coss while VDS is rising from 0

to 80% VDSS.

Equivalent

capacitance time

VGS = 0, VDS = 0 to 520 V

1950

Co(er)

(2)

Co(er) is a constant capacitance value that gives the same stored energy as Coss while VDS is rising from 0

to 80% VDSS.

Equivalent

capacitance energy

VGS = 0, VDS = 0 to 520 V

415

Intrinsic gate

resistance

f = 1 MHz open drain

0.7

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 520 V, ID = 69 A,

VGS = 10 V

(see Figure 15)

414

114

164

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