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145N65M5 датащи(PDF) 7 Page - STMicroelectronics

номер детали 145N65M5
подробное описание детали  N-channel 650 V, 0.012 廓 typ., 138 A, MDmesh??V Power MOSFET in Max247 package
PDF  13 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
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145N65M5 датащи(HTML) 7 Page - STMicroelectronics

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STY145N65M5
Electrical characteristics
Doc ID 023718 Rev 2
7/13
Figure 8.
Capacitance variations
Figure 9.
Output capacitance stored energy
Figure 10.
Normalized gate threshold voltage
vs temperature
Figure 11.
Normalized on-resistance vs
temperature
Figure 12.
Normalized BVDSS vs temperature
Figure 13.
Switching losses vs gate
resistance(1)
1.
Eon including reverse recovery of a SiC diode.
VGS(th)
1.00
0.90
0.80
0.70
-50
0
TJ(°C)
(norm)
-25
1.10
75
25
50
100
ID= 250µA
VDS= VGS
AM08899v1
RDS(on)
1.7
1.3
0.9
0.5
-50
0
TJ(°C)
(norm)
-25
75
25
50
100
2.1
ID = 69A
VGS= 10V
AM08900v1
VDS
-50
0
TJ(°C)
(norm)
-25
75
25
50
100
0.92
0.94
0.96
0.98
1.00
1.04
1.06
1.02
ID = 1mA
1.08
AM10399v1
E
0
0
20
RG(
Ω)
(
μJ)
10
30
1000
2000
40
ID=85 A
VDD=400 V
Eon
Eoff
3000
VGS=10 V
4000
5000
6000
7000
8000
9000
AM15555v1



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