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SPC5604BF2MLL6 датащи(PDF) 59 Page - Freescale Semiconductor, Inc

номер детали SPC5604BF2MLL6
подробное описание детали  MPC5604B/C Microcontroller
PDF  109 Pages
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производитель  FREESCALE [Freescale Semiconductor, Inc]
домашняя страница  http://www.freescale.com
Logo FREESCALE - Freescale Semiconductor, Inc

SPC5604BF2MLL6 датащи(HTML) 59 Page - Freescale Semiconductor, Inc

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Package pinouts and signal descriptions
MPC5604B/C Microcontroller Data Sheet, Rev. 11
Freescale Semiconductor
59
ECC circuitry provides correction of single bit faults and is used to improve further automotive reliability results. Some units
will experience single bit corrections throughout the life of the product with no impact to product reliability.
3.19.2
Flash power supply DC characteristics
Table 32 shows the power supply DC characteristics on external supply.
Table 30. Flash module life
Symbol
C
Parameter
Conditions
Value
Unit
Min
Typ
Max
P/E
CC C Number of program/erase cycles
per block over the operating
temperature range (TJ)
16 KB blocks
100,000
—
—
cycles
32 KB blocks
10,000 100,000
—
128 KB blocks
1,000 100,000
—
Retention CC C Minimum data retention at 85 °C
average ambient temperature1
1 Ambient temperature averaged over duration of application, not to exceed recommended product operating
temperature range.
Blocks with
0–1,000 P/E cycles
20
—
—
years
Blocks with
1,001–10,000 P/E cycles
10
—
—
Blocks with
10,001–100,000 P/E cycles
5—
—
Table 31. Flash read access timing
Symbol
C
Parameter
Conditions1
1 VDD = 3.3 V ± 10% / 5.0 V ± 10%, TA = 40 to 125 °C, unless otherwise specified
Max
Unit
fREAD CC P Maximum frequency for Flash reading
2 wait states
64
MHz
C
1 wait state
40
C
0 wait states
20
Table 32. Flash memory power supply DC electrical characteristics
Symbol
C
Parameter
Conditions1
Value
Unit
Min
Typ Max
IFREAD2 CC D Sum of the current consumption on
VDD_HV and VDD_BV on read access
Code flash memory module read
fCPU = 64 MHz3
—15
33
mA
Data flash memory module read
fCPU = 64 MHz3
—15
33
IFMOD2 CC D Sum of the current consumption on
VDD_HV and VDD_BV on matrix
modification (program/erase)
Program/Erase ongoing while
reading code flash memory
registers fCPU =64 MHz3
—15
33
mA
Program/Erase ongoing while
reading data flash memory
registers fCPU =64 MHz3
—15
33



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