AD636

Data Sheet

Rev. E | Page 4 of 16

Model

AD636J

AD636K

Unit

Min

Typ

Max

Min

Typ

Max

dB OUTPUT

±0.3

±0.5

±0.1

±0.2

dB

Scale Factor

−3.0

−3.0

mV/dB

Scale Factor Temperature

Coefficient

0.33

0.33

% of reading/°C

−0.033

−0.033

dB/°C

2

4

8

2

4

8

μA

1

50

1

50

μA

100

100

μA/V rms

−20

±10

+20

−20

±10

+20

%

Output Resistance

8

10

12

8

10

12

kΩ

Voltage Compliance

V

BUFFER AMPLIFIER

Input and Output Voltage Range

V

±0.8

±2

±0.5

±1

mV

Input Bias Current

100

300

100

300

nA

Input Resistance

Ω

Output Current

(+5 mA,

−130 μA)

(+5 mA,

−130 μA)

Short-Circuit Current

20

20

mA

Small Signal Bandwidth

1

1

MHz

Slew Rate6

5

5

V/μs

POWER SUPPLY

Voltage, Rated Performance

+3, −5

+3, −5

V

Dual Supply

+2, −2.5

±16.5

+2, −2.5

±16.5

V

Single Supply

5

24

5

24

V

Quiescent Current7

0.80

1.00

0.80

1.00

mA

TEMPERATURE RANGE

Rated Performance

0

+70

0

+70

°C

Storage

−55

+150

−55

+150

°C

TRANSISTOR COUNT

62

62

1

All minimum and maximum specifications are guaranteed. Specifications shown in boldface are tested on all production units at final electrical test and are used to

calculate outgoing quality levels.

2

Accuracy specified for 0 mV to 200 mV rms, dc or 1 kHz sine wave input. Accuracy is degraded at higher rms signal levels.

3

4

Error vs. crest factor is specified as additional error for a 200 mV rms rectangular pulse train, pulse width = 200 µs.

5

Input voltages are expressed in V rms.

6

7

With BUF IN tied to COMMON.