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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STM32F303VB датащи(PDF) 80 Page - STMicroelectronics |
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STM32F303VB датащи(HTML) 80 Page - STMicroelectronics |
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80 / 133 page  Electrical characteristics STM32F302xx/STM32F303xx 80/133 Doc ID 023353 Rev 5 6.3.8 Internal clock source characteristics The parameters given in Table 42 are derived from tests performed under ambient temperature and supply voltage conditions summarized in Table 22. High-speed internal (HSI) RC oscillator Figure 18. HSI oscillator accuracy characterization results 1. The above curves are based on characterisation results, not tested in production Table 42. HSI oscillator characteristics(1) 1. VDDA = 3.3 V, TA = –40 to 105 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit fHSI Frequency - 8 - MHz TRIM HSI user trimming step - - 1(2) 2. Guaranteed by design, not tested in production. % DuCy(HSI) Duty cycle 45(2) -55(2) % ACCHSI Accuracy of the HSI oscillator (factory calibrated) TA = –40 to 105 °C –3.8(3) 3. Data based on characterization results, not tested in production. -4.6(3) % TA = –10 to 85 °C –2.9(3) -2.9(3) % TA = 0 to 70 °C - - - % TA = 25 °C –1 - 1 % tsu(HSI) HSI oscillator startup time 1(2) -2(2) µs IDD(HSI) HSI oscillator power consumption - 80 100(3) µA |
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