ACE8628B datasheet(1/7 Pages) ACE

номер детали	ACE8628B

подробное описание детали	Dual N-Channel Enhancement Mode Field Effect Transistor with ESD Protection

PDF	7 Pages

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производитель	ACE [ACE Technology Co., LTD.]

домашняя страница	http://www.ace-ele.com

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ACE8628B

Dual N-Channel Enhancement Mode Field Effect Transistor with ESD Protection

VER 1.2

1

Description

The ACE8628B uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

They offer operation over a wide gate drive range from 1.8V to 12V. It is ESD protected. This device is

suitable for use as a uni-directional or bi-directional load switch, facilitated by its common-drain

configuration.

Features

 V

DS 20V

 I

D=8A (VGS=4.5V)

 R

DS(ON)<14mΩ (VGS=4.5V)

 R

DS(ON)<15mΩ (VGS=4V)

 R

DS(ON)<17.5mΩ (VGS=3.1V)

 R

DS(ON)<21mΩ (VGS=2.5V)

 ESD Protected: 2000V

Absolute Maximum Ratings

Parameter

Symbol

Max

Unit

Drain-Source Voltage

VDSS

20

V

Gate-Source Voltage

VGSS

±12

V

Drain Current (Continuous) * AC

TA=25

OC

ID

8

A

TA=70

OC

6.4

Drain Current (Pulse) * B

IDM

30

A

Power Dissipation

TA=25

OC

PD

2.5

W

TA=70

OC

1.6

Operating and Storage Junction Temperature Range TJ/TSTG -55/150

OC

Packaging Type

DFN3*3-8L

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