ACE8628B

Dual N-Channel Enhancement Mode Field Effect Transistor with ESD Protection

VER 1.2

3

Note:

A. The value of R

θJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with

10s thermal resistance rating.

B. Repetitive rating, pulse width limited by junction temperature.

C. The R

D. The static characteristics are obtained using <300

μs pulses, duty cycle 0.5% max.

E. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with

Typical Performance Characteristics