ACE6428B datasheet(1/8 Pages) ACE

номер детали	ACE6428B

подробное описание детали	N-Channel Enhancement Mode Field Effect Transistor

PDF	8 Pages

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производитель	ACE [ACE Technology Co., LTD.]

домашняя страница	http://www.ace-ele.com

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ACE6428B

N-Channel Enhancement Mode Field Effect Transistor

VER 1.2

1

Description

The ACE6428B uses advanced trench technology to provide excellent RDS(ON), low gate charge. This

device is suitable for use as a high side switch in SMPS and general purpose applications.

Features

 V

DS(V)=30V

 I

D=43A (VGS=10V)

 R

DS(ON)＜10mΩ (VGS=10V)

 R

DS(ON)＜14.5mΩ (VGS=4.5V)

 100% Delta Vsd Tested

 100% Rg Tested

Absolute Maximum Ratings

Parameter

Symbol

Max

Unit

Drain-Source Voltage

VDSS

30

V

Gate-Source Voltage

VGSS

±20

V

Drain Current (Continuous)

TA=25

OC

ID

43

A

TA=100

OC

27

Drain Current (Pulse)

C

IDM

80

Drain Current (Continuous)

TA=25

OC

IDSM

11

A

TA=70

OC

8

Power Dissipation

B

TA=25

OC

PD

30

W

TA=100

OC

12

Power Dissipation

A

TA=25

OC

PDSM

2

W

TA=70

OC

1.3

Operating and Storage Temperature Range TJ,TSTG -55 to 150

OC

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

Maximum Junction-to-Ambient

A

t≦10s

RθJA

21

25

℃/W

Maximum Junction-to-Ambient

A D

Steady-State

50

60

℃/W

Maximum Junction-to-Case

Steady-State

RθJC

3.5

4.2

℃/W

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ACE Technology Co., LTD...	ACE6428D	940Kb / 8P	N-Channel Enhancement Mode Field Effect Transistor VER 1.2

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