ACE6428B datasheet(3/8 Pages) ACE

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ACE6428B

N-Channel Enhancement Mode Field Effect Transistor

VER 1.2

Dynamic

Input Capacitance

Ciss

VDS=15V, VGS=0V

f=1MHz

2470

Output Capacitance

Coss

325

Reverse Transfer Capacitance

Crss

185

Note:

The value of RθJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with

TA=25°C. The Power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value

in any given application depends on the user's specific board design.

The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting

the upper dissipation limit for cases where additional heatsinking is used.

Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty

cycles to keep initial TJ =25°C.

The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.

The static characteristics in Figures 1 to 6 are obtained using <300

μs pulses, duty cycle 0.5% max.

These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large

heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.

The maximum current rating is package limited.

These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with

TA=25°C

Typical Performance Characteristics

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