ACE4710B datasheet(1/6 Pages) ACE

номер детали	ACE4710B

подробное описание детали	P-Channel Enhancement Mode MOSFET with Schottky Diode

PDF	6 Pages

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производитель	ACE [ACE Technology Co., LTD.]

домашняя страница	http://www.ace-ele.com

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ACE4710B

P-Channel Enhancement Mode MOSFET with Schottky Diode

VER 1.2

1

Description

ACE4710B combines a P-Channel enhancement mode power MOSFET which is produced with high cell

density and DMOS trench technology and a low forward voltage schottky diode. This device particularly

suits low voltage applications, especially for battery powered circuits, the tiny and thin outline saves PCB

consumption.

Features

MOSFET

 V

DS(V)=-20V

 I

D=-4A

 R

DS(ON)@-4.5V, 58mΩ (Typ.)

 R

DS(ON)@-2.5V, 76mΩ (Typ.)

 R

DS(ON)@-1.8V, 97mΩ (Typ.)

Schottky

 VR 20V

 IF 2A

 VF@1A<430mV

Application

 Li Battery Charging

 High Side DC/DC Converter

 High Side Driver for Brushless DC Motor

 Power Management in Portable, Battery Powered Devices

Absolute Maximum Ratings

Parameter

Symbol

Max

Unit

Drain-Source Voltage

VDSS

-20

V

Gate-Source Voltage

VGSS

±8

V

Drain Current (Continuous)

Continuous

ID

-4

A

Pulsed

-25

Schottky Reverse Voltage

VR

20

V

Schottky Continuous Forward Current

IF

2

A

Power Dissipation Derating above TA=25

OC

(Note 1)

PD

1.5

W

Operating and Storage Temperature Range

TJ,TSTG -55 to 150

OC

Note: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inches. The rating is for each chip in the package.

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