MMDF6N02HD

3

Motorola TMOS Power MOSFET Transistor Device Data

TYPICAL ELECTRICAL CHARACTERISTICS

2.7 V

0

4

8

12

VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

Figure 1. On–Region Characteristics

0

0.5

1

3

0

4

8

12

VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)

Figure 2. Transfer Characteristics

23

4

10

0

0.015

0.03

0.045

1

357

9

13

0.05

0.06

0.07

0.04

VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)

Figure 3. On–Resistance versus

Gate–To–Source Voltage

ID, DRAIN CURRENT (AMPS)

Figure 4. On–Resistance versus Drain Current

and Gate Voltage

0.6

1

1.2

1.4

1.6

0

2.5

5

20

1

100

1000

TJ, JUNCTION TEMPERATURE (°C)

Figure 5. On–Resistance Variation with

Temperature

VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

Figure 6. Drain–To–Source Leakage

Current versus Voltage

VDS ≥ 10 V

TJ = 100°C

25

°C

–55

°C

TJ = 25°C

VGS = 0 V

ID = 6 A

TJ = 25°C

VGS = 2.5 V

VGS = 4.5 V

ID = 3 A

1.5

2

2.5

56

7

8

9

11

4.5 V

– 50

– 25

0

25

50

75

100

125

150

TJ = 125°C

0.8

10

7.5

10

25

°C

100

°C

0

0.2

0.4

0.6

0.8

1.4

1

1.2

1.6

1.8

2

2

2.1 V

1.7 V

1.9 V

VGS = 10 V

2.3 V

2.5 V

4.5 V

TJ = 25°C

10

6

2

6

10

0.01

0.025

0.04

0.005

0.02

0.035

0.01

0.02

0.03

0

0.4

0.2

0

0.1

12.5

15

17.5