1

Motorola TMOS Power MOSFET Transistor Device Data

Designer's™ Data Sheet

Medium Power Surface Mount Products

TMOS Dual N-Channel

Field Effect Transistors

Dual HDTMOS devices are an advanced series of power

MOSFETs which utilize Motorola’s High Cell Density TMOS

process. These miniature surface mount MOSFETs feature low

RDS(on) and true logic level performance. Dual HDTMOS devices

are designed for use in low voltage, high speed switching

applications where power efficiency is important. Typical applica-

tions are dc–dc converters, and power management in portable

and battery powered products such as computers, printers, cellular

and cordless phones. They can also be used for low voltage motor

controls in mass storage products such as disk drives and tape

drives.

• Low RDS(on) Provides Higher Efficiency and Extends Battery Life

• Logic Level Gate Drive — Can Be Driven by Logic ICs

• Miniature SO–8 Surface Mount Package — Saves Board Space

• Diode Is Characterized for Use In Bridge Circuits

• Diode Exhibits High Speed, With Soft Recovery

• IDSS Specified at Elevated Temperature

• Mounting Information for SO–8 Package Provided

Rating

Symbol

Value

Unit

Drain–to–Source Voltage

VDSS

20

Vdc

Drain–to–Gate Voltage (RGS = 1.0 MΩ)

VDGR

20

Vdc

Gate–to–Source Voltage — Continuous

VGS

± 12

Vdc

Drain Current — Continuous @ TA = 25°C

ID

ID

IDM

6.5

6.0

52

Adc

Apk

Total Power Dissipation @ TA = 25°C (1)

PD

2.0

Watts

Operating and Storage Temperature Range

TJ, Tstg

– 55 to 150

°C

Thermal Resistance — Junction to Ambient

R

θJA

62.5

°C/W

Maximum Lead Temperature for Soldering Purposes

TL

260

°C

DEVICE MARKING

D6N02H

(1) Mounted on 1” square FR4 or G–10 board (VGS = 4.5 V, @ 10 seconds).

ORDERING INFORMATION

Device

Reel Size

Tape Width

Quantity

MMDF6N02HDR2

13

″

12mm embossed tape

2500

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit

curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

Preferred devices are Motorola recommended choices for future use and best overall value.

Designer’s and HDTMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Thermal Clad is a trademark of

the Bergquist Company.

Order this document

by MMDF6N02HD/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Source–1

1

2

3

4

8

7

6

5

Top View

Gate–1

Source–2

Gate–2

Drain–1

Drain–1

Drain–2

Drain–2

D

S

G

CASE 751–05, Style 11

SO–8

MMDF6N02HD

DUAL TMOS

POWER MOSFET

6.0 AMPERES

20 VOLTS

RDS(on) = 0.035 OHM

Motorola Preferred Device

™

REV 1