MMDF3N03HD

2

Motorola TMOS Power MOSFET Transistor Device Data

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain–to–Source Breakdown Voltage

(VGS = 0 Vdc, ID = 250 µAdc)

Temperature Coefficient (Positive)

V(BR)DSS

30

—

—

34.5

—

—

Vdc

mV/

°C

Zero Gate Voltage Drain Current

(VDS = 30 Vdc, VGS = 0 Vdc)

(VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125°C)

IDSS

—

—

—

—

1.0

10

µAdc

Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)

IGSS

—

—

100

nAdc

ON CHARACTERISTICS(1)

Gate Threshold Voltage

(VDS = VGS, ID = 250 µAdc)

Threshold Temperature Coefficient (Negative)

VGS(th)

1.0

1.7

3.0

Vdc

mV/

°C

Static Drain–to–Source On–Resistance

(VGS = 10 Vdc, ID = 3.0 Adc)

(VGS = 4.5 Vdc, ID = 1.5 Adc)

RDS(on)

—

—

0.06

0.065

0.07

0.075

Ohms

Forward Transconductance

(VDS = 3.0 Vdc, ID = 1.5 Adc)

gFS

2.0

3.6

—

Mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

(VDS = 24 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

Ciss

—

450

630

pF

Output Capacitance

(VDS = 24 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

Coss

—

160

225

Transfer Capacitance

f = 1.0 MHz)

Crss

—

35

70

SWITCHING CHARACTERISTICS(2)

Turn–On Delay Time

(VDD = 15 Vdc, ID = 3.0 Adc,

VGS = 4.5 Vdc,

RG = 9.1 Ω)

td(on)

—

12

24

ns

Rise Time

(VDD = 15 Vdc, ID = 3.0 Adc,

VGS = 4.5 Vdc,

RG = 9.1 Ω)

tr

—

65

130

Turn–Off Delay Time

VGS = 4.5 Vdc,

RG = 9.1 Ω)

td(off)

—

16

32

Fall Time

G = 9.1 Ω)

tf

—

19

38

Turn–On Delay Time

(VDD = 15 Vdc, ID = 3.0 Adc,

VGS = 10 Vdc,

RG = 9.1 Ω)

td(on)

—

8

16

ns

Rise Time

(VDD = 15 Vdc, ID = 3.0 Adc,

VGS = 10 Vdc,

RG = 9.1 Ω)

tr

—

15

30

Turn–Off Delay Time

VGS = 10 Vdc,

RG = 9.1 Ω)

td(off)

—

30

60

Fall Time

G = 9.1 Ω)

tf

—

23

46

Gate Charge

(VDS = 10 Vdc, ID = 3.0 Adc,

VGS = 10 Vdc)

QT

—

11.5

16

nC

(VDS = 10 Vdc, ID = 3.0 Adc,

VGS = 10 Vdc)

Q1

—

1.5

—

(VDS = 10 Vdc, ID = 3.0 Adc,

VGS = 10 Vdc)

Q2

—

3.5

—

Q3

—

2.8

—

SOURCE–DRAIN DIODE CHARACTERISTICS

Forward On–Voltage(1)

(IS = 3.0 Adc, VGS = 0 Vdc)

(IS = 3.0 Adc, VGS = 0 Vdc, TJ = 125°C)

VSD

—

—

0.82

0.7

1.2

—

Vdc

Reverse Recovery Time

See Figure 12

(IS = 3.0 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/µs)

trr

—

24

—

ns

See Figure 12

(IS = 3.0 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/µs)

ta

—

17

—

dIS/dt = 100 A/µs)

tb

—

7

—

Reverse Recovery Storage Charge

QRR

—

0.025

—

µC

(1) Pulse Test: Pulse Width

≤ 300 µs, Duty Cycle ≤ 2%.

(2) Switching characteristics are independent of operating junction temperature.