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Motorola TMOS Power MOSFET Transistor Device Data

Designer's™ Data Sheet

Medium Power Surface Mount Products

TMOS Dual N-Channel

Field Effect Transistors

MiniMOS

™ devices are an advanced series of power MOSFETs

which utilize Motorola’s High Cell Density HDTMOS process.

These miniature surface mount MOSFETs feature ultra low RDS(on)

and true logic level performance. They are capable of withstanding

high energy in the avalanche and commutation modes and the

drain–to–source diode has a very low reverse recovery time.

MiniMOS devices are designed for use in low voltage, high speed

switching applications where power efficiency is important. Typical

applications are dc–dc converters, and power management in

portable and battery powered products such as computers,

printers, cellular and cordless phones. They can also be used for

low voltage motor controls in mass storage products such as disk

drives and tape drives. The avalanche energy is specified to

eliminate the guesswork in designs where inductive loads are

switched and offer additional safety margin against unexpected

voltage transients.

• Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life

• Logic Level Gate Drive — Can Be Driven by Logic ICs

• Miniature SO–8 Surface Mount Package — Saves Board Space

• Diode Is Characterized for Use In Bridge Circuits

• Diode Exhibits High Speed, With Soft Recovery

• IDSS Specified at Elevated Temperature

• Avalanche Energy Specified

• Mounting Information for SO–8 Package Provided

Rating

Symbol

Value

Unit

Drain–to–Source Voltage

VDSS

30

Vdc

Drain–to–Gate Voltage (RGS = 1.0 MΩ)

VDGR

30

Vdc

Gate–to–Source Voltage — Continuous

VGS

± 20

Vdc

Drain Current — Continuous @ TA = 25°C

ID

ID

IDM

4.1

3.0

40

Adc

Apk

Total Power Dissipation @ TA = 25°C (1)

PD

2.0

Watts

Operating and Storage Temperature Range

TJ, Tstg

– 55 to 150

°C

Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C

(VDD = 30 Vdc, VGS = 5.0 Vdc, Peak IL = 9.0 Apk, L = 8.0 mH, RG = 25 Ω)

EAS

324

mJ

Thermal Resistance — Junction to Ambient (1)

R

θJA

62.5

°C/W

Maximum Lead Temperature for Soldering Purposes, 1/8

″ from case for 10 seconds

TL

260

°C

DEVICE MARKING

D3N03

ORDERING INFORMATION

Device

Reel Size

Tape Width

Quantity

MMDF3N03HDR2

13

″

12 mm embossed tape

2500 units

(1) When mounted on 2” square FR–4 board (1” square 2 oz. Cu 0.06” thick single sided) with one die operating, 10s max.

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit

curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

Designer’s, HDTMOS and MiniMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.

Thermal Clad is a trademark of the Bergquist Company.

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document

by MMDF3N03HD/D

™

MMDF3N03HD

DUAL TMOS

POWER MOSFET

4.1 AMPERES

30 VOLTS

RDS(on) = 0.070 OHM

CASE 751–05, Style 11

SO–8

D

S

G

Source–1

1

2

3

4

8

7

6

5

Top View

Gate–1

Source–2

Gate–2

Drain–1

Drain–1

Drain–2

Drain–2

Motorola Preferred Device

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 6