MMDF3C03HD datasheet(3/12 Pages) MOTOROLA

номер детали	MMDF3C03HD

подробное описание детали	COMPLEMENTARY DUAL TMOS POWER FET 30 VOLTS

PDF	12 Pages

Scroll/Zoom	100%

производитель	MOTOROLA [Motorola, Inc]

домашняя страница	http://www.freescale.com

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MMDF3C03HD

Motorola TMOS Power MOSFET Transistor Device Data

TYPICAL ELECTRICAL CHARACTERISTICS

N–Channel

P–Channel

Figure 1. On–Region Characteristics

Figure 2. Transfer Characteristics

Figure 1. On–Region Characteristics

Figure 2. Transfer Characteristics

Figure 3. On–Resistance versus

Gate–To–Source Voltage

Figure 3. On–Resistance versus

Gate–To–Source Voltage

2.9 V

1.2

2.0

VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

6.0

4.0

5.0

3.0

2.0

1.0

0.6

0.2

0.4

0.8

1.0

1.4

1.6

1.8

TJ = 25°C

2.7 V

3.1 V

3.3 V

3.5 V

3.7 V

3.9 V

VGS = 10 V

4.1 V

4.5 V

6.0 V

4.3 V

VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)

4.5

5.0

1.5

4.0

2.0

1.0

2.0

2.5

3.0

3.5

4.0

3.0

5.0

6.0

VDS ≥ 10 V

TJ = –55°C

100

°C

8.0

2.0

VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)

0.8

0.4

0.3

0.2

0.1

9.0

3.0

4.0

5.0

6.0

7.0

0.5

TJ = 25°C

ID = 3 A

0.6

0.7

1.2

2.0

VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

8.0

6.0

4.0

2.0

0.6

0.2

0.4

0.8

1.0

1.4

1.6

1.8

TJ = 25°C

2.7 V

2.9 V

3.1 V

3.3 V

3.5 V

VGS = 2.5 V

10 V

6.0 V

4.5 V

4.3 V

4.1 V

3.7 V

3.9 V

VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)

4.5

5.0

1.5

8.0

4.0

2.0

2.5

3.0

3.5

4.0

6.0

VDS ≥ 10 V

TJ = –55°C

100

°C

8.0

2.0

VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)

0.30

0.20

0.15

0.10

0.05

9.0

3.0

4.0

5.0

6.0

7.0

0.25

TJ = 25°C

ID = 6 A

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