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Motorola TMOS Power MOSFET Transistor Device Data

Designer's™ Data Sheet

Medium Power Surface Mount Products

Complementary TMOS

Field Effect Transistors

MiniMOS devices are an advanced series of power MOSFETs

which utilize Motorola’s High Cell Density HDTMOS process.

These miniature surface mount MOSFETs feature ultra low RDS(on)

and true logic level performance. They are capable of withstanding

high energy in the avalanche and commutation modes and the

drain–to–source diode has a very low reverse recovery time.

MiniMOS devices are designed for use in low voltage, high speed

switching applications where power efficiency is important. Typical

applications are dc–dc converters, and power management in

portable and battery powered products such as computers,

printers, cellular and cordless phones. They can also be used for

low voltage motor controls in mass storage products such as disk

drives and tape drives.

• Ultra Low RDS(on) Provides Higher Efficiency and

Extends Battery Life

• Logic Level Gate Drive — Can Be Driven by Logic ICs

• Miniature SO–8 Surface Mount Package —

Saves Board Space

• Ideal for Synchronous Rectification

• Diode Exhibits High Speed, With Soft Recovery

• IDSS Specified at Elevated Temperature

• Mounting Information for SO–8 Package Provided

Rating

Symbol

Polarity

Value

Unit

Drain–to–Source Voltage

VDSS

—

30

Vdc

Gate–to–Source Voltage

VGS

—

± 20

Vdc

Drain Current — Continuous

ID

N–Channel

5.0

Adc

P–Channel

3.0

Drain Current — Pulsed

IDM

N–Channel

25

Apk

P–Channel

15

Operating and Storage Temperature Range

TJ, Tstg

—

–55 to +150

°C

Total Power Dissipation @ TA = 25°C (1)

PD

2.0

Watts

Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C

(VDD = 30 Vdc, VGS = 5.0 Vdc, IL = 9.0 Apk, L = 10 mH, RG = 25 W)

EAS

N–Channel

325

mJ

(VDD = 30 Vdc, VGS = 5.0 Vdc, IL = 9.0 Apk, L = 10 mH, RG = 25 W)

P–Channel

450

Thermal Resistance — Junction–to–Ambient (1)

R

θJA

62.5

°C/W

Maximum Lead Temperature for Soldering Purposes, 1/8

″ from Case for 10 sec.

TL

260

°C

DEVICE MARKING

D3C03HD

(1) Mounted on G10/FR4 glass epoxy board using minimum recommended footprint.

ORDERING INFORMATION

Device

Reel Size

Tape Width

Quantity

MMDF3C03HDR2

13

″

12 mm embossed tape

2500

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit

curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

Designer’s, HDTMOS and MiniMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.

Thermal Clad is a trademark of the Bergquist Company.

Preferred devices are Motorola recommended choices for future use and best overall value.

Order this document

by MMDF3C03HD/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

N–Source

1

2

3

4

8

7

6

5

Top View

N–Gate

P–Source

P–Gate

Drain

Drain

Drain

Drain

P–G

CASE 751–05, Style 11

SO–8

MMDF3C03HD

COMPLEMENTARY

DUAL TMOS POWER FET

30 VOLTS

N–CH RDS(on) = 0.050 W

P–CH RDS(on) = 0.100 W

Motorola Preferred Device

™

N–S

D

P–S

N–G

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