MMDF2N02E

3

Motorola TMOS Power MOSFET Transistor Device Data

TYPICAL ELECTRICAL CHARACTERISTICS

Figure 1. On–Region Characteristics

Figure 2. Transfer Characteristics

Figure 3. On–Resistance versus

Gate–to–Source Voltage

Figure 4. On–Resistance versus Drain Current

and Gate Voltage

Figure 5. On–Resistance Variation with

Temperature

Figure 6. Drain–to–Source Leakage Current

versus Voltage

0

0.25

0.75

1.5

2

0

1

3

VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

4

2

TJ = 25°C

2.7 V

0.5

1.75

1.25

1

5

6

2.5 V

2.9 V

3.1 V

3.3 V

3.5 V

3.7 V

4.5 V

4.3 V

3.9 V

4.1 V

VGS = 10 V

7

0

VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)

VDS ≥ 10 V

TJ = 25°C

TJ = –55°C

25

°C

100

°C

2

4

6

5

1

2

2.5

3

3.5

4

3

7

1.5

0.4

0.5

0.6

0.3

0.1

0.2

0

2

3

4

5

8

6

7

9

10

VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)

ID = 3.5 A

TJ = 25°C

0

ID, DRAIN CURRENT (AMPS)

0.15

0

1

2

5

6

0.05

0.1

3

4

10 V

VGS = 4.5

TJ = 25°C

7

TJ, JUNCTION TEMPERATURE (°C)

– 50

0

50

100

150

0

0.5

1.0

1.5

2.0

VGS = 10 V

ID = 3.5 A

125

75

25

– 25

1

100

VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

10

5

10

15

20

VGS = 0 V

TJ = 125°C

100

°C

1000

10000

25

°C

25