MMDF2N02E

DUAL TMOS MOSFET

3.6 AMPERES

25 VOLTS

RDS(on) = 0.1 OHM

®

Source–1

1

2

3

4

8

7

6

5

Top View

Gate–1

Source–2

Gate–2

Drain–1

Drain–1

Drain–2

Drain–2

D

S

G

CASE 751–05, Style 11

SO–8

1

Motorola TMOS Power MOSFET Transistor Device Data

Designer's™ Data Sheet

Medium Power Surface Mount Products

TMOS Dual N-Channel

Field Effect Transistors

MiniMOS

™ devices are an advanced series of power MOSFETs

which utilize Motorola’s TMOS process. These miniature surface

mount MOSFETs feature ultra low RDS(on) and true logic level

performance. They are capable of withstanding high energy in the

avalanche and commutation modes and the drain–to–source diode

has a low reverse recovery time. MiniMOS devices are designed

for use in low voltage, high speed switching applications where

power efficiency is important. Typical applications are dc–dc

converters, and power management in portable and battery

powered products such as computers, printers, cellular and

cordless phones. They can also be used for low voltage motor

controls in mass storage products such as disk drives and tape

drives. The avalanche energy is specified to eliminate the

guesswork in designs where inductive loads are switched and offer

additional safety margin against unexpected voltage transients.

• Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life

• Logic Level Gate Drive — Can Be Driven by Logic ICs

• Miniature SO–8 Surface Mount Package — Saves Board Space

• Diode Is Characterized for Use In Bridge Circuits

• IDSS Specified at Elevated Temperatures

• Avalanche Energy Specified

• Mounting Information for SO–8 Package Provided

Rating

Symbol

Value

Unit

Drain–to–Source Voltage

VDSS

25

Vdc

Gate–to–Source Voltage — Continuous

VGS

± 20

Vdc

Drain Current — Continuous @ TA = 25°C

ID

ID

IDM

3.6

2.5

18

Adc

Apk

Total Power Dissipation @ TA = 25°C (1)

PD

2.0

W

Operating and Storage Temperature Range

TJ, Tstg

– 55 to 150

°C

Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C

(VDD = 20 Vdc, VGS = 10 Vdc, Peak IL = 9.0 Apk, L = 6.0 mH, RG = 25 Ω)

EAS

245

mJ

Thermal Resistance, Junction to Ambient (1)

R

θJA

62.5

°C/W

Maximum Lead Temperature for Soldering Purposes, 0.0625

″ from case for 10 seconds

TL

260

°C

DEVICE MARKING

F2N02

(1) Mounted on 2” square FR4 board (1” sq. 2 oz. Cu 0.06” thick single sided) with one die operating, 10 sec. max.

ORDERING INFORMATION

Device

Reel Size

Tape Width

Quantity

MMDF2N02ER2

13

″

12 mm embossed tape

2500

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit

curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

Designer’s, E–FET and MiniMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.

Thermal Clad is a trademark of the Bergquist Company.

Order this document

by MMDF2N02E/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

REV 5