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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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MMDF2C03HD датащи(PDF) 9 Page - Motorola, Inc |
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MMDF2C03HD датащи(HTML) 9 Page - Motorola, Inc |
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9 / 12 page  MMDF2C03HD 9 Motorola TMOS Power MOSFET Transistor Device Data N–Channel P–Channel Figure 13. Maximum Avalanche Energy versus Starting Junction Temperature Figure 13. Maximum Avalanche Energy versus Starting Junction Temperature TJ, STARTING JUNCTION TEMPERATURE (°C) 0 25 50 75 100 125 150 ID = 9 A 250 150 350 100 50 200 300 TJ, STARTING JUNCTION TEMPERATURE (°C) 0 25 50 75 100 125 150 50 ID = 6 A 250 350 100 200 300 150 TYPICAL ELECTRICAL CHARACTERISTICS di/dt trr ta tp IS 0.25 IS TIME IS tb Figure 14. Thermal Response Figure 15. Diode Reverse Recovery Waveform t, TIME (s) 1 0.1 0.01 D = 0.5 SINGLE PULSE 1.0E–05 1.0E–04 1.0E–03 1.0E–02 1.0E–01 1.0E+00 1.0E+01 0.2 0.1 0.05 0.02 0.01 1.0E+02 1.0E+03 0.001 10 0.0175 Ω 0.0710 Ω 0.2706 Ω 0.5776 Ω 0.7086 Ω 107.55 F 1.7891 F 0.3074 F 0.0854 F 0.0154 F Chip Ambient Normalized to θja at 10s. |
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