MMDF2C03HD datasheet(4/12 Pages) MOTOROLA

номер детали	MMDF2C03HD

подробное описание детали	COMPLEMENTARY DUAL TMOS POWER FET 2.0 AMPERES 30 VOLTS

PDF	12 Pages

Scroll/Zoom	100%

производитель	MOTOROLA [Motorola, Inc]

домашняя страница	http://www.freescale.com

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4 / 12 page

MMDF2C03HD

Motorola TMOS Power MOSFET Transistor Device Data

TYPICAL ELECTRICAL CHARACTERISTICS

N–Channel

P–Channel

Figure 3. On–Resistance versus

Gate–To–Source Voltage

Figure 4. On–Resistance versus Drain Current

and Gate Voltage

Figure 5. On–Resistance Variation with

Temperature

Figure 3. On–Resistance versus

Gate–To–Source Voltage

Figure 4. On–Resistance versus Drain Current

and Gate Voltage

Figure 5. On–Resistance Variation with

Temperature

0.4

0.5

0.6

0.3

0.1

0.2

VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)

ID = 1.5 A

TJ = 25°C

0.05

ID, DRAIN CURRENT (AMPS)

0.08

0.5

2.5

0.06

0.07

1.5

10 V

VGS = 4.5

TJ = 25°C

TJ, JUNCTION TEMPERATURE (°C)

– 50

100

150

0.5

1.0

1.5

2.0

VGS = 10 V

ID = 1.5 A

125

– 25

VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)

ID, DRAIN CURRENT (AMPS)

0.5

1.5

0.10

0.15

0.20

0.25

0.30

TJ = 25°C

VGS = 4.5 V

2.5

3.5

10 V

0.1

0.3

0.4

0.6

ID = 1 A

TJ = 25°C

0.2

0.5

TJ, JUNCTION TEMPERATURE (°C)

– 50

100

150

0.6

VGS = 10 V

ID = 2 A

1.4

– 25

125

0.8

1.6

1.2

1.0

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