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APT5010JVRU2 датащи(PDF) 4 Page - Advanced Power Technology

номер детали APT5010JVRU2
подробное описание детали  Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
PDF  7 Pages
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производитель  ADPOW [Advanced Power Technology]
домашняя страница  http://www.advpowertech.com
Logo ADPOW - Advanced Power Technology

APT5010JVRU2 датащи(HTML) 4 Page - Advanced Power Technology

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V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Qg, TOTAL GATE CHARGE (nC)
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
APT5010JVRU2
Characteristic / Test Conditions
Maximum D.C. Reverse Voltage
Maximum Peak Repetitive Reverse Voltage
Maximum Working Peak Reverse Voltage
Maximum Average Forward Current (T
C
= 80
°C, Duty Cycle = 0.5)
RMS Forward Current
Non-Repetitive Forward Surge Current (T
J
= 45
°C, 8.3mS)
Operating and StorageTemperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Symbol
V
R
V
RRM
V
RWM
I
F
(AV)
I
F
(RMS)
I
FSM
T
J
,T
STG
T
L
Symbol
V
F
I
RM
C
T
Characteristic / Test Conditions
I
F
= 30A
Maximum Forward Voltage
I
F
= 60A
I
F
= 30A, T
J
= 150
°C
Maximum Reverse Leakage Current
V
R
= V
R
Rated
V
R
= V
R
Rated, T
J
= 125
°C
Junction Capacitance, V
R
= 200V
STATIC ELECTRICAL CHARACTERISTICS
UNIT
Volts
Amps
°C
UNIT
Volts
µA
pF
MIN
TYP
MAX
1.8
1.5
1.6
250
500
40
APT5010JVRU2
600
30
60
320
-55 to 150
300
MAXIMUM RATINGS (UltraFast Recovery Diode)
All Ratings: TC = 25°C unless otherwise specified.
Diode Specifications Section
TC =+25°C
TJ =+150°C
SINGLE PULSE
200
100
50
10
5
1
.5
.1
20
16
12
8
4
0
OPERATION HERE
LIMITED BY RDS (ON)
TJ =+150°C
TJ =+25°C
Crss
1
5
10
50 100
500
.01
.1
1
10
50
0
100
200
300
400
500
0
0.4
0.8
1.2
1.6
2.0
Coss
Ciss
30,000
10,000
5,000
1,000
500
100
200
100
50
10
5
1
VDS=250V
VDS=100V
VDS=400V
I
D
= I
D
[Cont.]
10
µS
1mS
10mS
100mS
DC
100
µS



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