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APT5010JVRU2 датащи(PDF) 2 Page - Advanced Power Technology

номер детали APT5010JVRU2
подробное описание детали  Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
PDF  7 Pages
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производитель  ADPOW [Advanced Power Technology]
домашняя страница  http://www.advpowertech.com
Logo ADPOW - Advanced Power Technology

APT5010JVRU2 датащи(HTML) 2 Page - Advanced Power Technology

  APT5010JVRU2 Datasheet HTML 1Page - Advanced Power Technology APT5010JVRU2 Datasheet HTML 2Page - Advanced Power Technology APT5010JVRU2 Datasheet HTML 3Page - Advanced Power Technology APT5010JVRU2 Datasheet HTML 4Page - Advanced Power Technology APT5010JVRU2 Datasheet HTML 5Page - Advanced Power Technology APT5010JVRU2 Datasheet HTML 6Page - Advanced Power Technology APT5010JVRU2 Datasheet HTML 7Page - Advanced Power Technology  
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background image
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
DYNAMIC CHARACTERISTICS
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
V
GS
= 10V
V
DD
= 0.5 V
DSS
I
D
= I
D[Cont.]
@ 25
°C
V
GS
= 15V
V
DD
= 0.5 V
DSS
I
D
= I
D[Cont.]
@ 25
°C
R
G
= 0.6
MIN
TYP
MAX
7410
1050
390
312
37
127
18
16
54
5
UNIT
pF
nC
ns
APT5010JVRU2
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (V
GS
= 0V, I
S
= -I
D[Cont.]
)
Reverse Recovery Time (I
S
= -I
D[Cont.]
, dl
S
/dt = 100A/
µs)
Reverse Recovery Charge (I
S
= -I
D[Cont.]
, dl
S
/dt = 100A/
µs)
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
UNIT
Amps
Volts
ns
µC
MIN
TYP
MAX
44
176
1.3
620
14.7
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.3
0.1
0.05
0.01
0.005
0.001
Note:
Duty Factor D =
t1/t
2
Peak TJ = PDM x ZθJC + TC
t1
t2
0.1
SINGLE PULSE
0.02
0.05
0.2
D=0.5
0.01
1 Repetitive Rating: Pulse width limited by maximum junction
3 See MIL-STD-750 Method 3471
temperature.
4 Starting Tj = +25°C, L = 2.58mH, RG = 25Ω, Peak IL = 44A
2 Pulse Test: Pulse width < 380
µS, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
THERMAL / PACKAGE CHARACTERISTICS
Symbol
RθJC
RθJA
VIsolation
Torque
MIN
TYP
MAX
0.28
40
2500
13
UNIT
°C/W
Volts
lb•in
Characteristic
Junction to Case
Junction to Ambient
RMS Voltage (50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.)
Maximum Torque for Device Mounting Screws and Electrical Terminations.



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