7934 datasheet(2/10 Pages) AOSMD

2 / 10 page

AON7934

Symbol

Min

Typ

Max

Units

BVDSS

VDS=30V, VGS=0V

TJ=55°C

IGSS

100

VGS(th)

Gate Threshold Voltage

1.2

1.8

2.2

8.3

10.2

TJ=125°C

11.2

13.7

12.4

15.8

Ω

gFS

VSD

0.7

Ciss

485

Coss

235

Crss

0.9

1.8

2.7

Ω

Qg(10V)

Qg(4.5V)

3.9

5.3

Qgs

1.1

Qgd

2.1

tD(on)

3.5

2.8

16.3

Maximum Body-Diode Continuous Current

Input Capacitance

Output Capacitance

Turn-On DelayTime

DYNAMIC PARAMETERS

Turn-On Rise Time

Turn-Off DelayTime

VGS=10V, VDS=15V, RL=1.2Ω,

Ω

Gate resistance

VGS=0V, VDS=0V, f=1MHz

Reverse Transfer Capacitance

Total Gate Charge

VGS=10V, VDS=15V, ID=13A

Gate Source Charge

Gate Drain Charge

Total Gate Charge

IS=1A,VGS=0V

VDS=5V, ID=13A

VGS=4.5V, ID=10A

Forward Transconductance

Diode Forward Voltage

VGS=10V, ID=13A

RDS(ON)

Static Drain-Source On-Resistance

IDSS

µA

VDS=VGS ID=250µA

VDS=0V, VGS= ±20V

Zero Gate Voltage Drain Current

Gate-Body leakage current

Ω

VGS=0V, VDS=15V, f=1MHz

SWITCHING PARAMETERS

Q1 Electrical Characteristics (TJ=25°C unless otherwise noted)

STATIC PARAMETERS

Parameter

Conditions

Drain-Source Breakdown Voltage

ID=250µA, VGS=0V

tD(off)

16.3

trr

9.9

Qrr

12.9

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Body Diode Reverse Recovery Charge IF=13A, dI/dt=500A/µs

Turn-Off DelayTime

RGEN=3Ω

Turn-Off Fall Time

IF=13A, dI/dt=500A/µs

Body Diode Reverse Recovery Time

A. The value of RθJA is measured with the device mounted on 1in

2 FR-4 board with 2oz. Copper, in a still air environment with T

A =25°C. The

Power dissipation P

DSM is based on R

θJA t≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given

application depends on the user's specific board design.

B. The power dissipation P

D is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper

dissipation limit for cases where additional heatsinking is used.

C. Repetitive rating, pulse width limited by junction temperature T

J(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep

initial T

J =25°C.

D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300

µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming

a maximum junction temperature of T

J(MAX)=150°C. The SOA curve provides a single pulse rating.

G. The maximum current rating is limited by package.

H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.

Rev0 : April 2012

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