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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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7934 датащи(PDF) 1 Page - Alpha & Omega Semiconductors |
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7934 датащи(HTML) 1 Page - Alpha & Omega Semiconductors |
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1 / 10 page  AON7934 30V Dual Asymmetric N-Channel AlphaMOS General Description Product Summary Q1 Q2 30V 30V ID (at VGS=10V) 16A 18A RDS(ON) (at VGS=10V) <10.2m Ω <7.7mΩ RDS(ON) (at VGS = 4.5V) <15.8m Ω <11.6mΩ 100% UIS Tested Application 100% Rg Tested • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant • DC/DC Converters in Computing, Servers, and POL • Isolated DC/DC Converters in Telecom and Industrial Absolute Maximum Ratings TA=25°C unless otherwise noted VDS Power DFN3x3A Top View Bottom View G1 D1 D1 D1 D1 (S1/D2) G2 S2 S2 S2 Top View Bottom View Symbol VDS VGS IDM IAS EAS VDS Spike VSPIKE TJ, TSTG Parameter Symbol Typ Q1 Max Q1 Typ Q2 Max Q2 t ≤ 10s 40 50 40 50 Steady-State 70 90 70 90 Steady-State RθJC 4.5 5.4 4.2 5 100ns Maximum Junction-to-Case °C/W °C/W Maximum Junction-to-Ambient A D RθJA Maximum Junction-to-Ambient A °C/W Parameter ±20 Power Dissipation B PD TC=25°C Power Dissipation A PDSM 19 TA=70°C TA=25°C V A 30 7.8 12 ±20 V Pulsed Drain Current C Absolute Maximum Ratings TA=25°C unless otherwise noted Avalanche Energy L=0.05mH C 3.0 mJ 15 4.1 Avalanche Current C Continuous Drain Current 9 IDSM Units 25 36 36 A Max Q2 72 13 A V 18 10 2.5 14 2.5 Units W W Thermal Characteristics TC=100°C Max Q1 Gate-Source Voltage Drain-Source Voltage Continuous Drain Current G 64 16 ID TC=25°C TC=100°C 0.9 0.9 23 Junction and Storage Temperature Range -55 to 150 °C 25 9 TA=70°C TA=25°C Rev0 : April 2012 www.aosmd.com Page 1 of 10 |
Аналогичный номер детали - 7934 |
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Аналогичное описание - 7934 |
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