TIG058E8

No. A1381-2/7

Electrical Characteristics at Ta=25°C

Parameter

Symbol

Conditions

Ratings

Unit

min

typ

max

Collector-to-Emitter Breakdown Voltage

V(BR)CES

IC=2mA, VGE=0V

400

V

Collector-to-Emitter Cutoff Current

ICES

VCE=320V, VGE=0V

10

μA

Gate-to-Emitter Leakage Current

IGES

VGE=±6V, VCE=0V

±10

μA

Gate-to-Emitter Threshold Voltage

VGE(off)

VCE=10V, IC=1mA

0.4

0.9

V

Collector-to-Emitter Saturation Voltage

VCE(sat)

IC=100A, VGE=4V

4.0

5.6

V

Input Capacitance

Cies

VCE=10V, f=1MHz

2200

pF

Output Capacitance

Coes

32

pF

Reverse Transfer Capacitance

Cres

24

pF

Fig.1 Large Current R Load Switching Circuit

Note1. Gate Series Resistance RG ≥ 230Ω is recommended for protection purpose at the time of turn OFF. However,

if dv / dt ≤ 400V / μs is satisfied at customer’s actual set evaluation, RG < 230Ω can also be used.

Note2. The collector voltage gradient dv / dt must be smaller than 400V / μs to protect the device when it is turned off.

Ordering Information

Device

Package

Shipping

memo

TIG058E8-TL-H

ECH8

3,000pcs./reel

Pb Free and Halogen Free

IC -- VCE

Collector-to-Emitter Voltage, VCE -- V

IC -- VGE

Gate-to-Emitter Voltage, VGE -- V

IT14281

0

0

20

40

60

80

120

140

160

180

100

200

IT14282

0

0

12

5

7

69

8

34

10

0.5

20

40

60

80

120

140

160

180

100

200

1.0

1.5

2.5

2.0

4.0

4.5

3.0

3.5

5.0

VGE

=5.0V

4.0V

3.0V

2.5V

75°C

Tc=

--25

°C

100kΩ

CM

RL

RG

VCC

+

TIG058E8

4V

0V