TIG058E8

No. A1381-1/7

Ordering number : ENA1381A

60612 TKIM/D1008PJ MSIM TC-00001783

SANYO Semiconductors

DATA SHEET

http://semicon.sanyo.com/en/network

Features

•

Low-saturation voltage

•

Low voltage drive (4V)

•

Enhansment type

•

Built-in Gate-to-Emitter protection diode

•

Mounting Height 0.9mm, Mounting Area 8.12mm

2

•

dv / dt guarantee

*

•

Halogen free compliance

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter

Symbol

Conditions

Ratings

Unit

Collector-to-Emitter Voltage

VCES

400

V

Gate-to-Emitter Voltage (DC)

VGES

±6

V

Gate-to-Emitter Voltage (Pulse)

VGES

PW≤1ms

±8

V

Collector Current (Pulse)

ICP

CM=150μF, VGE=4V

150

A

Maximum Collector-to-Emitter dv / dt

dVCE / dt

VCE≤320V, starting Tch=25°C

400

V / μs

Channel Temperature

Tch

150

°C

Storage Temperature

Tstg

-40 to +150

°C

* : Concerning dv / dt (slope of Collector Voltage at the time of Turn-OFF), dv / dt > 400V / μs will be 100% screen-detected in the circuit shown as Fig. 1.

Package Dimensions

unit : mm (typ)

7011A-004

Light-Controlling Flash Applications

Product & Package Information

• Package

: ECH8

• JEITA, JEDEC

: -

• Minimum Packing Quantity : 3000 pcs./reel

Packing Type: TL

Marking

Electrical Connection

1 : Emitter

2 : Emitter

3 : Emitter

4 : Gate

5 : Collector

6 : Collector

7 : Collector

8 : Collector

SANYO : ECH8

1

4

85

0.15

0 t o 0.02

0.65

2.9

0.3

To p View

Bo t t o m View

TL

87

6

5

12

3

4

TIG058E8-TL-H

ZB

LOT No.