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PXD20 датащи(PDF) 90 Page - Freescale Semiconductor, Inc |
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PXD20 датащи(HTML) 90 Page - Freescale Semiconductor, Inc |
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90 / 130 page ![]() Electrical characteristics PXD20 Microcontroller Data Sheet, Rev. 2 Preliminary—Subject to Change Without Notice Freescale Semiconductor 90 4.15 Flash memory electrical characteristics Table 42. Program and erase specifications Symbol C Parameter Min Value Typical Value1 1 Typical program and erase times assume nominal supply values and operation at 25 °C. All times are subject to change pending device characterization. Initial Max2 2 Initial factory condition: < 100 program/erase cycles, 25 °C, typical supply voltage. Max3 3 The maximum program & erase times occur after the specified number of program/erase cycles. These maximum values are characterized but not guaranteed. Unit SpecID Tdwprogram C Double Word (64 bits) Program Time4 4 Actual hardware programming times. This does not include software overhead. —22 500 sD14.1 T16kpperase C 16 KB Block Pre-program and Erase Time — 500 5000 ms D14.2 T32kpperase C 32 KB Block Pre-program and Erase Time — 600 5000 ms D14.3 T128kpperase C 128 KB Block Pre-program and Erase Time — 1300 7500 ms D14.4 Table 43. Flash module life Symbol C Parameter Conditions Value Unit SpecID Min Typ P/E C Number of program/erase cycles per block for 16 KB, 48KB and 64KB blocks, across full operating temperature range (Tj) — 100,000 — P/E cycles D14.5 P/E C Number of program/erase cycles per block for 128KB and 256KB blocks, across full operating temperature range (Tj) — 1, 000 100,000 P/E cycles D14.6 Data retention C Minimum data retention at 85 °C average ambient temperature1 1 Ambient temperature averaged over duration of application, not to exceed recommended product operating temperature range. Blocks with 0 – 1,000 P/E cycles 20 — Years D14.8 Blocks with 1,001 – 10,000 P/E cycles 10 — Years Blocks with 10,001 – 100,000 P/E cycles 5 — Years |
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