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M63840KP датащи(PDF) 2 Page - Mitsubishi Electric Semiconductor

номер детали M63840KP
подробное описание детали  8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE SOURCE TYPE
PDF  6 Pages
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производитель  MITSUBISHI [Mitsubishi Electric Semiconductor]
домашняя страница  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor

M63840KP датащи(HTML) 2 Page - Mitsubishi Electric Semiconductor

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<TRANSISTOR ARRAY>
8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
SOURCE TYPE
M63840KP
2
2012.May
V
-2.0
-1.3
IF = -350mA
Clamping diode forward 
voltage
VF
5.0
180
VI = 3.85V
μA
100
VR = 40V
Clamping diode reverse current
IR
mA
2.5
VS = 40V, VI = 2V (all input)
Supply current
IS
μA
52
36
VI = 2.4V
Input current
II
2.0
1.5
VS = 10V, VI = 2.0V, IO = -100mA
V
2.0
1.7
VS = 10V, VI = 2.0V, IO = -350mA
Collector-emitter saturation
voltage
VCE(sat)
μA
100
VS = 40V, VI = 0.8V
Supply leak current
IS(leak)
max
typ
min
Unit
Limits
Test conditions
Parameter
Symbol
ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = 25℃)
Duty Cycle
no more than 3%
V
0.8
0
“L” input voltage
VIL
V
12
2.0
“H” input voltage
VIH
-100
0
Duty Cycle
no more than 25%
mA
-350
0
Output current (Current per 1
circuit when 8 circuits are
coming on simultaneously)
IO
V
40
0
Supply voltage
VS
max
typ
min
Unit
Limits
Parameter
Symbol
RECOMMENDED OPERATING (Unless otherwise noted, Ta = –40 ~ +85℃)
SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25
℃)
ns
2200
Turn-off time
toff
ns
210
CL = 15pF(note 1)
Turn-on time
ton
max
typ
min
Unit
Limits
Test conditions
Parameter
Symbol
#
#
# : Unused Input pins must be connected to GND.
NOTE 1 TEST CIRCUIT
TIMING DIAGRAM
OUTPUT
INPUT
50%
50%
on
50%
50%
off
50Ω
CL
RL
PG
INPUT
OUTPUT
Measured
device
(1) Pulse generator (PG) characteristics: PRR = 1kHz,
tw = 10ms, tr = 6ns, tf = 6ns, ZO = 50Ω ,VI = 0 to 2V
(2) Input-output conditions : RL = 30Ω, VS = 10V
(3) Electrostatic capacity CL includes floating capacitance at
connections and input capacitance at probes
VS



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