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LDO mode OVP with Integrated P-MOSFET

BL8596

DESCRIPTION

The BL8596 is Li+ charger IC with integrated P-

MOSFET. The device is fabricated with advanced

CMOS technology to achieve maintaining low static

power dissipation over a very broad VCC operating

range.

The BL8596 integrates a P-MOSFET and Schottky

diode which is normally a discrete device

employed for conventional battery charging

design of mobile phone system. In addition to

that, BL8596 works like a LDO mode to keep

CHRIN voltage stable when ACIN goes high. And

thus it will not trigger the CHRIN pin over-voltage

protection when ACIN voltage increased to as

high as 15V.

The BL8596 provides complete Li+ charger

protections and saves the external MOSFET and

Schottky diode for the charger of cell phone’s PMIC.

It is available in a DFN2x2-8L package.

The above features and small package make the

BL8596 an ideal part for cell phones applications.

FEATURES

 A Built-In P-MOSFET

 LDO mode makes CHRIN voltage stable around

5.5V

 Range of operation input voltage: Max 15V

 Charging current up to 1A

 Environment Temperature: -20C~85C

APPLICATIONS

 Cell phone and other portable device

APPLICATION CIRCUIT

ORDERING INFORMATION / PIN CONFIGURATION / MARKING

BL8596CKBTR

DFN2x2-8L

BL8596CB6TR

SOT23-6L

Top Marking

OBYW

YW means the year and week parts being manufactured, subjected to change. OB is the code of the product;

it will not be changed on any part.

BL8596