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2SC6134 датащи(PDF) 2 Page - Toshiba Semiconductor |
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2SC6134 датащи(HTML) 2 Page - Toshiba Semiconductor |
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2 / 4 page ![]() 2CS6134 2010-03-07 2 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 50 V, IE = 0 ⎯ ⎯ 100 nA Emitter cut-off current IEBO VEB = 6 V, IC = 0 ⎯ ⎯ 100 nA Collector-emitter breakdown voltage V (BR) CEO IC = 10 mA, IB = 0 30 ⎯ ⎯ V hFE (1) VCE = 2 V, IC = 0.3 A 250 ⎯ 400 DC current gain hFE (2) VCE = 2 V, IC = 1.0 A 120 ⎯ ⎯ Collector-emitter saturation voltage VCE (sat) IC = 1.0 A, IB = 33 mA ⎯ ⎯ 0.14 V Base-emitter saturation voltage VBE (sat) IC = 1.0 A, IB = 33 mA ⎯ ⎯ 1.10 V Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz ⎯ 18 ⎯ pF Rise time tr ⎯ 40 ⎯ Storage time tstg ⎯ 320 ⎯ Switching time Fall time tf See Figure 1. VCC ≈ 12 V, RL = 12 Ω IB1 = −IB2 = 33 mA ⎯ 25 ⎯ ns W W Part No. (or abbreviation code) Figure 1 Switching Time Test Circuit & Timing Chart IB2 IB1 20 μs Output Input IB2 IB1 VCC Duty cycle < 1% Marking |
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