2CS6134

2010-03-07

1

TOSHIBA Transistor Silicon NPN Epitaxial Type

2SC6134

High-Speed Switching Applications

DC-DC Converter Applications

Strobe Applications

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•

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Characteristics

Symbol

Rating

Unit

Collector-base voltage

50

V

Collector-emitter voltage

50

V

Collector-emitter voltage

30

V

Emitter-base voltage

6

V

DC

3.0

Collector current

Pulse

5.0

A

Base current

0.3

A

800

Collector power dissipation

500

mW

Junction temperature

150

°C

Storage temperature range

−55 to 150

°C

Note1:

Mounted on ceramic board. (25.4 mm

Note2:

Mounted on FR4 board. (25.4 mm

Note3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-2U1A

Weight: 6.6 mg (typ.)

1.7±0.1

2.1±0.1

1

2

3

1 :Gate

2 :Source

3 :Drain

UFM