MGSF3455VT1

3

Motorola Small–Signal Transistors, FETs and Diodes Device Data

TYPICAL ELECTRICAL CHARACTERISTICS

012

34

0

4

8

12

20

VDS, DRAIN–TO–SOURCE VOLTAGE (V)

Figure 1. Output Characteristics

01

23

4

0

4

8

12

VGS, GATE–TO–SOURCE VOLTAGE (V)

Figure 2. Transfer Characteristics

04

8

12

16

20

0

0.06

0.12

0.18

ID, DRAIN CURRENT (A)

Figure 3. On–Resistance vs. Drain Current

Figure 4. Capacitance

Figure 5. Gate Charge

TJ = –55°C

25

°C

125

°C

16

3 V

5 V

4 V

16

20

56

0.24

0.30

VGS = 4.5 V

–50

0.7

0.85

1.00

1.15

TJ, JUNCTION TEMPERATURE (°C)

–25

0

25

50

75

100

150

VGS = 10 V

ID = 3.5 A

1.30

125

VGS = 10, 9, 8, 7 V

VGS = 10 V

Figure 6. On–Resistance vs. Junction Temperature

612

18

VDS – DRAIN–TO–SOURCE VOLTAGE (V)

Ciss

Coss

Crss

24

30

0

Qg, TOTAL GATE CHARGE (nC)

1.5

3.0

4.5

6.0

VDS = 15 V

ID = 3.5 A

0

10

8

6

4

2

0

20

100

180

260

340

420

500

580

6 V

7

1.45

1.60