1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Preliminary Information

Low rDS(on) Small-Signal MOSFETs

TMOS Single P-Channel

Field Effect Transistors

Part of the GreenLine

™ Portfolio of devices with energy–

conserving traits.

These miniature surface mount MOSFETs utilize Motorola’s High

Cell Density, HDTMOS process. Low rDS(on) assures minimal

power loss and conserves energy, making this device ideal for use

in small power management circuitry. Typical applications are

dc–dc converters, power management in portable and battery–

powered products such as computers, printers, PCMCIA cards,

cellular and cordless telephones.

• Low rDS(on) Provides Higher Efficiency and Extends Battery Life

• Miniature TSOP 6 Surface Mount Package Saves Board Space

• Visit our Web Site at http://www.mot–sps.com/ospd

Rating

Symbol

Value

Unit

Drain–to–Source Voltage

VDSS

30

Vdc

Gate–to–Source Voltage — Continuous

VGS

± 20

Vdc

Drain Current — Continuous @ TA = 25°C

ID

IDM

3.5

20

A

Total Power Dissipation @ TA = 25°C Mounted on FR4 t  5 sec

PD

2.0

W

Operating and Storage Temperature Range

TJ, Tstg

– 55 to 150

°C

Thermal Resistance — Junction–to–Ambient

R

θJA

62.5

°C/W

Maximum Lead Temperature for Soldering Purposes, for 10 seconds

TL

260

°C

ORDERING INFORMATION

Device

Reel Size

Tape Width

Quantity

MGSF3455VT1

7

″

8 mm embossed tape

3000

MGSF3455VT3

13

″

8 mm embossed tape

10,000

GreenLine is a trademark of Motorola, Inc.

HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.

Thermal Clad is a trademark of the Bergquist Company.

This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.

Preferred devices are Motorola recommended choices for future use and best overall value.

Order this document

by MGSF3455VT1/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

CASE 318G–02, Style 1

TSOP 6 PLASTIC

MGSF3455VT1

P–CHANNEL

ENHANCEMENT–MODE

TMOS MOSFET

rDS(on) = 80 mΩ (TYP)

Motorola Preferred Device

™

D

D

D

G

D

S

DRAIN

3

GATE

SOURCE

4

6

5

2

1

™