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SST31LF021 датащи(PDF) 9 Page - Silicon Storage Technology, Inc

номер детали SST31LF021
подробное описание детали  2 Mbit Flash 1 Mbit SRAM ComboMemory
PDF  24 Pages
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производитель  SST [Silicon Storage Technology, Inc]
домашняя страница  http://www.sst.com/
Logo SST - Silicon Storage Technology, Inc

SST31LF021 датащи(HTML) 9 Page - Silicon Storage Technology, Inc

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Data Sheet
2 Mbit Flash + 1 Mbit SRAM ComboMemory
SST31LF021 / SST31LF021E
9
©2001 Silicon Storage Technology, Inc.
S71137-03-000
10/01 392
AC CHARACTERISTICS
TABLE
9: SRAM MEMORY BANK READ CYCLE TIMING PARAMETERS (VDD = 3.0-3.6V)
Symbol
Parameter
SST31LF021-70
SST31LF021E-300
Unit
Min
Max
Min
Max
TRCS
Read Cycle Time
70
300
ns
TAAS
Address Access Time
70
300
ns
TBES
Bank Enable Access Time
70
300
ns
TOES
Output Enable Access Time
35
150
ns
TBLZS1
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
BES# to Active Output
0
15
ns
TOLZS1
Output Enable to Active Output
0
15
ns
TBHZS1
BES# to High-Z Output
25
30
ns
TOHZS1
Output Disable to High-Z Output
25
30
ns
TOHS
Output Hold from Address Change
0
10
ns
T9.4 392
TABLE 10: SRAM MEMORY BANK WRITE CYCLE TIMING PARAMETERS (VDD = 3.0-3.6V)
Symbol
Parameter
SST31LF021-70
SST31LF021E-300
Unit
Min
Max
Min
Max
TWCS
Write Cycle Time
70
300
ns
TBWS
Bank Enable to End-of-Write
60
230
ns
TAWS
Address Valid to End-of-Write
60
230
ns
TASTS
Address Set-up Time
0
0
ns
TWPS
Write Pulse Width
60
200
ns
TWRS
Write recovery Time
0
0
ns
TDSS
Data Set-up Time
30
150
ns
TDHS
Data Hold from Write Time
0
0
ns
T10.4 392
TABLE 11: FLASH READ CYCLE TIMING PARAMETERS (VDD = 3.0-3.6V)
Symbol
Parameter
SST31LF021-70
SST31LF021E-300
Units
Min
Max
Min
Max
TRC
Read Cycle Time
70
300
ns
TBE
Bank Enable Access Time
70
300
ns
TAA
Address Access Time
70
300
ns
TOE
Output Enable Access Time
40
150
ns
TBLZ1
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
BEF# Low to Active Output
0
0
ns
TOLZ1
OE# Low to Active Output
0
0
ns
TBHZ1
BEF# High to High-Z Output
15
60
ns
TOHZ1
OE# High to High-Z Output
15
60
ns
TOH1
Output Hold from Address Change
0
0
ns
T11.3 392



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