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PJS50N03 датащи(PDF) 2 Page - Pan Jit International Inc.

номер детали PJS50N03
подробное описание детали  30V N-CHANNEL ENHANCEMENT MODE MOSFET
PDF  6 Pages
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производитель  PANJIT [Pan Jit International Inc.]
домашняя страница  http://www.panjit.com.tw
Logo PANJIT - Pan Jit International Inc.

PJS50N03 датащи(HTML) 2 Page - Pan Jit International Inc.

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PAGE . 2
March 19,2012-REV.00
PJS50N03
ELECTRICAL CHARACTERISTICS (T
A=25
OC unless otherwise noted )
PARAME T E R
S YMBOL
T E S T CONDIT ION
MIN.
T YP.
M AX .
UNIT S
Static
Drain-Source Breakdown Voltage
BV
DSS
V
GS=0 V, ID= 250 μ A3 0
-
-
V
Gate Threshold Voltage
V
GS(th)
V
DS=V GS, ID= 250 μ A
1.0
2.0
3.0
V
Drain-Source On-State Resistance
R
DS(on)
V
GS= 10V, I D= 3.1A
-
27
57
mΩ
V
GS= 4.5V, I D= 2.8A
-
40
94
Zero Gate Voltage Drain Current
I
DSS
V
DS= 30V, VGS=0V
-
-
0.5
μA
Gate -Source Leakage Current
I
GSS
V
GS= + 20V, V DS=0 V
-
-
+100
nA
Diode Forward Voltage
V
SD
I
S= 1. 25A , V GS=0 V
-
0.9
1.2
V
Dynamic
Total Gate Charge
Q
g
V
DS= 15V, ID= 3.1A
V
GS= 10V
-
12.63
-
nC
Gate-Source Charge
Q
gs
-2.25
-
Gate-Drain Charge
Q
gd
-2.62
-
Turn-On Delay Time
td
on
V
DS= 15V , VGS= 10V,
R
G= 6Ω , RL= 5Ω
-11.6
-
ns
Turn-Off Delay Time
td
off
-
35.2
-
Turn-On Rise Time
t
r
-
19.6
-
Turn-Off Fall Time
t
f
-8.2
-
Input Capacitance
C
iss
V
DS= 15V, V GS=0 V
f=1.0MH
Z
-
607
-
pF
Output Capacitance
C
oss
-66
-
Reverse Transfer Capacitance
C
rss
-59
-



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