PAGE . 1

March 19,2012-REV.00

PJS50N03

FEATURES

• R

• R

• Advanced Trench Process Technology

• High Density Cell Design For Ultra Low On-Resistance

• Specially Designed for DC/DC Converters

• Low Gate Charge

• Lead free in comply with EU RoHS 2002/95/EC directives.

• Green molding compound as per IEC61249 Std. . (Halogen Free)

MECHANICAL DATA

• Case: SOT-23 6L Package

• Terminals : Solderable per MIL-STD-750,Method 2026

• Apporx. Weight : 0.0003 ounces, 0.0084grams

• Marking : N03

30V N-CHANNEL ENHANCEMENT MODE MOSFET

MAXIMUM RATINGS AND THERMAL CHARACTERISTICS (T

NOTES:

1. Mounted on 7.5cm

2

FR-4 PCB .

PARAM E T E R

S YM BOL

L IMIT

UN IT S

D r a i n- S o urc e Vo lta g e

V

DS

30

V

Ga te - S our c e Vo ltage

V

GS

+ 20

V

C o nti nuo us D rai n C urre nt

S teady-S ta te

T

D

2.9

A

P uls ed D rai n C urr ent

I

DM

16

A

P o we r D i s s i pati o n (N o tes 1)

S teady-S ta te

T

D

0.7

W

Typi cal Ther ma l Re s i s tanc e (Notes 1 )

R

θJA

176

Operati ng Junc ti on and S torage Te m perature Ra ng e

T

-55 to + 1 5 0

VOLTAGE

30 Volts

2.9 Amperes

CURRENT