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DLPR100 датащи(PDF) 3 Page - Texas Instruments |
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DLPR100 датащи(HTML) 3 Page - Texas Instruments |
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3 / 15 page ![]() 00FFFFh • 0000FFh 1FFFFFh • 1F00FFh Block 0(64KB) Block 31(64KB) • • • • 00FFFFh • 0000FFh 1FFFFFh • 1F00FFh Beginning page address Ending page address DLPR100 www.ti.com DLPS020 – DECEMBER 2009 Figure 1. Memory Blocks of the DLPR100 Functional Description The memory blocks of the DLPR100 are shown in Figure 1. SPI Operation The DLPR100 is accessed through an SPI compatible bus. Data input on the DIO pin is sampled on the rising edge of the CLK. Data on the DO and DIO pins are clocked out on the falling edge of the CLK. Write Protection Upon power-up or at power-down the DLPR100 will maintain a reset condition while VCC is below the threshold value of VWI. While reset, all operations are disabled and no instructions are recognized. During power-up and after the VCC voltage exceeds VWI, all program and erase related instructions are further disabled for a time of tPUW. This includes the Write Enable, Page Program, Sector Erase, Block Erase, Chip Erase and the Write Status Register instructions. Note that the chip select pin (CS) must track the VCC supply level at power-up until the VCC-min level and tVSL time delay is reached. If needed a pull-up resistor on CScan be used to accomplish this. After power-up the device is automatically placed in a write-disabled state with the Status Register Write Enable Latch (WEL) set to a 0. A Write Enable instruction must be issued before a write operation will be accepted. After completing a write operation the Write Enable Latch (WEL) is automatically cleared to a write-disabled status of 0. Software controlled write protection is facilitated using the Write Status Register instruction and setting the Status Register Protect (SRP) and Block Protect (TB, BP2, BP1, and BP0) bits. Additionally, the Power-down instruction offers an extra level of write protection as all instructions are ignored except for the Released Power-down instruction. Control and Status Registers The Read Status Register instruction can be used to provide status on the availability of the Flash memory array, if the device is write enabled/disabled, and the state of write protect. The Write Status Resister instruction can be used to configure the device’s write protection feature. Copyright © 2009, Texas Instruments Incorporated Submit Documentation Feedback 3 Product Folder Link(s): DLPR100 |
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