CSD87331Q3D datasheet(10/21 Pages) TI1

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Output Current (A)

PowerBlock HS/LS RDS(ON) = 18mΩ/6.7mΩ

Discrete HS/LS RDS(ON) = 18mΩ/6.7mΩ

Discrete HS/LS RDS(ON) = 18mΩ/5.5mΩ

VGS = 5V

VIN = 12V

VOUT = 1.3V

LOUT = 1µH

fSW = 500kHz

TA = 25ºC

0.5

1.5

2.5

3.5

Output Current (A)

PowerBlock HS/LS RDS(ON) = 18mΩ/6.7mΩ

Discrete HS/LS RDS(ON) = 18mΩ/6.7mΩ

Discrete HS/LS RDS(ON) = 18mΩ/5.5mΩ

VGS = 5V

VIN = 12V

VOUT = 1.3V

LOUT = 1µH

fSW = 500kHz

TA = 25ºC

CSD87331Q3D

SLPS283A

– SEPTEMBER 2011 – REVISED JANUARY 2012

www.ti.com

The combination of TI

’s latest generation silicon and optimized packaging technology has created a

benchmarking solution that outperforms industry standard MOSFET chipsets of similar RDS(ON) and MOSFET

chipsets with lower RDS(ON). Figure 30 and Figure 31 compare the efficiency and power loss performance of the

CSD87331Q3D versus industry standard MOSFET chipsets commonly used in this type of application. This

comparison purely focuses on the efficiency and generated loss of the power semiconductors only. The

performance of CSD87331Q3D clearly highlights the importance of considering the Effective AC On-Impedance

(ZDS(ON)) during the MOSFET selection process of any new design. Simply normalizing to traditional MOSFET

RDS(ON) specifications is not an indicator of the actual in-circuit performance when using TI’s Power Block

technology.

Figure 30.

Figure 31.

The chart below compares the traditional DC measured RDS(ON) of CSD87331Q3D versus its ZDS(ON). This

comparison takes into account the improved efficiency associated with TI

’s patented packaging technology. As

such, when comparing TI

’s Power Block products to individually packaged discrete MOSFETs or dual MOSFETs

in a standard package, the in-circuit switching performance of the solution must be considered. In this example,

individually packaged discrete MOSFETs or dual MOSFETs in a standard package would need to have DC

measured RDS(ON) values that are equivalent to CSD87331Q3D’s ZDS(ON) value in order to have the same

efficiency performance at full load. Mid to light-load efficiency will still be lower with individually packaged discrete

MOSFETs or dual MOSFETs in a standard package.

Comparison of RDS(ON) vs. ZDS(ON)

Parameter

Typ

Max

Typ

Max

Effective AC On-Impedance ZDS(ON) (VGS = 5V)

5.5

DC Measured RDS(ON) (VGS = 4.5V)

6.7

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