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CSD87331Q3D датащи(PDF) 3 Page - Texas Instruments

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номер детали CSD87331Q3D
подробное описание детали  Synchronous Buck NexFET??Power Block
PDF  21 Pages
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производитель  TI1 [Texas Instruments]
домашняя страница  http://www.ti.com
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CSD87331Q3D датащи(HTML) 3 Page - Texas Instruments

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CSD87331Q3D
www.ti.com
SLPS283A
– SEPTEMBER 2011 – REVISED JANUARY 2012
ELECTRICAL CHARACTERISTICS
TA = 25°C (unless otherwise stated)
Q1 Control FET
Q2 Sync FET
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
MIN
TYP
MAX
UNIT
Static Characteristics
BVDSS
Drain to Source Voltage
VGS = 0V, IDS = 250µA
30
30
V
Drain to Source Leakage
IDSS
VGS = 0V, VDS = 20V
1
1
µA
Current
Gate to Source Leakage
IGSS
VDS = 0V, VGS = +10 / –8V
100
100
nA
Current
Gate to Source Threshold
VGS(th)
VDS = VGS, IDS = 250µA
1
2.1
0.8
1.2
V
Voltage
VIN = 12V, VGS = 5V,
VOUT = 1.3V, IOUT = 10A,
ZDS(on)
Effective AC On-Impedance
18
5.5
m
Ω
fSW = 500kHz,
LOUT = 1µH
gfs
Transconductance
VDS = 15V, IDS = 8A
26
48
S
Dynamic Characteristics
CISS
Input Capacitance
432
518
926
1110
pF
COSS
Output Capacitance
VGS = 0V, VDS = 15V,
158
190
378
454
pF
f = 1MHz
Reverse Transfer
CRSS
7
9
24
30
pF
Capacitance
RG
Series Gate Resistance
5.2
6.5
0.7
1.5
Ω
Qg
Gate Charge Total (4.5V)
2.7
3.2
6.4
7.7
nC
Qgd
Gate Charge - Gate to Drain
0.4
1.1
nC
VDS = 15V,
Gate Charge - Gate to
IDS = 8A
Qgs
0.9
1.5
nC
Source
Qg(th)
Gate Charge at Vth
0.5
0.8
nC
QOSS
Output Charge
VDS = 14V, VGS = 0V
3.6
7.7
nC
td(on)
Turn On Delay Time
3.4
3.8
ns
tr
Rise Time
4.5
4.7
ns
VDS = 15V, VGS = 4.5V,
IDS = 8A, RG = 2Ω
td(off)
Turn Off Delay Time
7.4
11.2
ns
tf
Fall Time
1.3
2.4
ns
Diode Characteristics
VSD
Diode Forward Voltage
IDS = 8A, VGS = 0V
0.85
1
0.85
1
V
Qrr
Reverse Recovery Charge
4
5.9
nC
VDS = 14V, IF = 8A,
di/dt = 300A/
µs
trr
Reverse Recovery Time
10
13
ns
Max RθJA = 80°C/W
Max RθJA = 149°C/W
when mounted on
when mounted on
1 inch2 (6.45 cm2) of
minimum pad area of
2-oz. (0.071-mm thick)
2-oz. (0.071-mm thick)
Cu.
Cu.
Copyright
© 2011–2012, Texas Instruments Incorporated
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