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DMP1245UFCL датащи(PDF) 3 Page - Diodes Incorporated |
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DMP1245UFCL датащи(HTML) 3 Page - Diodes Incorporated |
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3 / 7 page ![]() DMP1245UFCL Document number: DS35505 Rev. 1 - 2 3 of 7 www.diodes.com November 2011 © Diodes Incorporated DMP1245UFCL A Product Line of Diodes Incorporated 0.001 0.01 0.1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, PULSE DURATION TIMES (sec) Fig. 03 Transient Thermal Resistance R(t)=r(t) * R θθ JA JA R = 205°C/W Duty Cycle, D=t1/ t2 θJA 1 Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage BVDSS -12 ⎯ ⎯ V VGS = 0V, ID = -250µA Zero Gate Voltage Drain Current TJ = 25°C IDSS ⎯ ⎯ -1 µA VDS = -12.0V, VGS = 0V Gate-Source Leakage IGSS ⎯ ⎯ ±10 µA VGS = ±8.0V, VDS = 0V ON CHARACTERISTICS (Note 6) Gate Threshold Voltage VGS(th) -0.3 -0.6 -0.95 V VDS = VGS, ID = -250µA Static Drain-Source On-Resistance RDS (ON) ⎯ 25 29 m Ω VGS = -4.5V, ID = - 4A ⎯ 31 45 VGS = -2.5V, ID = - 3.5A ⎯ 40 60 VGS = -1.8V, ID = - 1A ⎯ 60 100 VGS = -1.5 V, ID = - 0.5A Forward Transfer Admittance |Yfs| 0.4 3 - S VDS = -5V, ID = -2A Diode Forward Voltage VSD - - -1.0 V VGS = 0V, ID = -2A DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Ciss - 1357.4 - pF VDS = -10V, VGS = 0V f = 1.0MHz Output Capacitance Coss - 499 - pF Reverse Transfer Capacitance Crss - 273.6 - pF Gate Resistance Rg - 14.26 - Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge Qg - 16.1 - nC VGS = -4.5V ID = -1A, VDS = -10V - 26.1 - nC VGS = -8V Gate-Source Charge Qgs - 1.71 - nC Gate-Drain Charge Qgd - 20.48 - nC Turn-On Delay Time tD(on) - 15.2 - ns VGS = -2.5V, VDS = -10V ID = -180mA, RG = 2.0Ω, Turn-On Rise Time tr - 33.11 - ns Turn-Off Delay Time tD(off) - 219.4 - ns Turn-Off Fall Time tf - 217.64 - ns Notes: 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to production testing. |
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