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DMP1245UFCL датащи(PDF) 2 Page - Diodes Incorporated

номер детали DMP1245UFCL
подробное описание детали  12V P-CHANNEL ENHANCEMENT MODE MOSFET
PDF  7 Pages
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производитель  DIODES [Diodes Incorporated]
домашняя страница  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMP1245UFCL датащи(HTML) 2 Page - Diodes Incorporated

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DMP1245UFCL
Document number: DS35505 Rev. 1 - 2
2 of 7
www.diodes.com
November 2011
© Diodes Incorporated
DMP1245UFCL
A Product Line of
Diodes Incorporated
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
Units
Drain-Source Voltage
VDSS
-12
V
Gate-Source Voltage
VGSS
±8
V
Continuous Drain Current (Note 5)
@TA = 25°C
@TA = 70°C
ID
-6.6
-5.25
A
Pulsed Drain Current
TP = 10μs
IDM
-16.67
A
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
Units
Total Power Dissipation
(Note 4)
PD
613
mW
(Note 5)
1.7
W
Thermal Resistance, Junction to Ambient
(Note 4)
RθJA
204
°C/W
(Note 5)
74
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Notes:
4. For a device surface mounted on minimum recommended pad layout, in still air conditions; the device is measured when operating in a steady state
condition.
5. For a device surface mounted on 25mm by 25mm by 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is
measured when operating in a steady state condition.
Thermal Characteristics
0
10
20
30
40
50
60
70
80
90
100
0.0001 0.001 0.01
0.1
1
10
100
1000
t , PULSE DURATION TIME (sec)
Fig. 1 Single Pulse Maximum Power Dissipation
1
Single Pulse
R
=205°C/W
R(t)=R
*r(t)
T-T =P*R
(t)
θ
θθ
θ
JA
JA
JA
JA
JA
0.1
1
10
100
-V
, DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 2 SOA, Safe Operation Area
0.1
1
10
100
I
(A
) @
P
=1
m
s
D
W
I
(A
) @
P
=1
00
µs
D
W
0.01
I (A) @P =10s
DW
I (A) @ DC
D
I(A) @P =1s
DW
I (A) @P =100ms
DW
I (A) @P =10ms
DW
I(A) @
P =10µs
D
W
T
= 150 C
T= 25 C
Single Pulse
J(MAX)
A
°
°
R
Limited
DS(ON)



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