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DMP1245UFCL датащи(PDF) 2 Page - Diodes Incorporated |
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DMP1245UFCL датащи(HTML) 2 Page - Diodes Incorporated |
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2 / 7 page ![]() DMP1245UFCL Document number: DS35505 Rev. 1 - 2 2 of 7 www.diodes.com November 2011 © Diodes Incorporated DMP1245UFCL A Product Line of Diodes Incorporated Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Units Drain-Source Voltage VDSS -12 V Gate-Source Voltage VGSS ±8 V Continuous Drain Current (Note 5) @TA = 25°C @TA = 70°C ID -6.6 -5.25 A Pulsed Drain Current TP = 10μs IDM -16.67 A Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Value Units Total Power Dissipation (Note 4) PD 613 mW (Note 5) 1.7 W Thermal Resistance, Junction to Ambient (Note 4) RθJA 204 °C/W (Note 5) 74 Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Notes: 4. For a device surface mounted on minimum recommended pad layout, in still air conditions; the device is measured when operating in a steady state condition. 5. For a device surface mounted on 25mm by 25mm by 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is measured when operating in a steady state condition. Thermal Characteristics 0 10 20 30 40 50 60 70 80 90 100 0.0001 0.001 0.01 0.1 1 10 100 1000 t , PULSE DURATION TIME (sec) Fig. 1 Single Pulse Maximum Power Dissipation 1 Single Pulse R =205°C/W R(t)=R *r(t) T-T =P*R (t) θ θθ θ JA JA JA JA JA 0.1 1 10 100 -V , DRAIN-SOURCE VOLTAGE (V) DS Fig. 2 SOA, Safe Operation Area 0.1 1 10 100 I (A ) @ P =1 m s D W I (A ) @ P =1 00 µs D W 0.01 I (A) @P =10s DW I (A) @ DC D I(A) @P =1s DW I (A) @P =100ms DW I (A) @P =10ms DW I(A) @ P =10µs D W T = 150 C T= 25 C Single Pulse J(MAX) A ° ° R Limited DS(ON) |
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