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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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THS6204IPWPR датащи(PDF) 4 Page - Texas Instruments |
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THS6204IPWPR датащи(HTML) 4 Page - Texas Instruments |
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4 / 43 page  ELECTRICAL CHARACTERISTICS: VS = ±12V THS6204 SBOS416C – OCTOBER 2007 – REVISED APRIL 2009 ................................................................................................................................................... www.ti.com At TA = +25°C, RF = 1.24kΩ, RL = 100Ω differential, GDiff = 10V/V differential, GCM = 1V/V common-mode, and full bias, unless otherwise noted. Each port is independently tested. THS6204IRHF, IPWP TYP OVER TEMPERATURE 0°C to –40°C to MIN/ TEST PARAMETER CONDITIONS +25°C +25°C(2) +70°C(3) +85°C(3) UNITS MAX LEVEL(1) AC PERFORMANCE GDIFF = 5V/V differential, RF = 1.5kΩ, 160 MHz Typ C VO = 2VPP Small-signal bandwidth, –3dB (VO = 2VPP) GDIFF = 10V/V differential, 150 120 110 100 MHz Min B RF = 1.24kΩ, VO = 2VPP GDIFF = 10V/V differential, 0.1dB bandwidth flatness 114 MHz Typ C RF = 1.24kΩ GDIFF = 10V/V differential, Large-signal bandwidth 120 MHz Typ C VO = 20VPP GDIFF = 10V/V, VO = 20V step, Slew rate (10% to 90% level) 3800 3200 3100 3000 V/ µs Min B differential Rise and fall time GDIFF = +5V/V, VO = 2VPP, differential 5 ns Typ C Harmonic distortion Full bias –100 –95 –92 –90 dBc Min B 2nd harmonic GDIFF = 10V/V, Low bias –96 dBc Typ C VO = 2VPP, Full bias –89 –85 –82 –80 dBc Min B f = 1MHz, RL = 100Ω 3rd harmonic Low bias –85 dBc Typ C Full bias –75 –70 –68 –65 dBc Min B 2nd harmonic GDIFF = 10V/V, Low bias –72 dBc Typ C VO = 2VPP, f = 10MHz, Full bias –73 –65 –61 –53 dBc Min B RL = 100Ω 3rd harmonic Low bias –58 dBc Typ C VDSL2 8b profile +20.5dBm –70 dBc Typ C Multi-tone power ratio (MTPR) VDSL2 17a profile +14.5dBm; G ≈ 11, active termination, SF ≈ 4. –65 dBc Typ C power supply = ±7.5V Differential input voltage noise f = 1MHz 2.5 3.0 3.2 3.3 nV/ √Hz Max B Differential inverting current noise f = 1MHz 17 20 22 24 pA/ √Hz Max B Differential noninverting current noise f = 1MHz 1.2 1.4 1.5 1.6 pA/ √Hz Max B DC PERFORMANCE Open-loop transimpedance gain RL = 100Ω 700 330 320 300 k Ω Typ A Input offset voltage ±15 ±50 ±55 ±60 mV Max A Input offset voltage drift ±110 ±155 µV/°C Max B Input offset voltage matching Channels 1 to 2 and 3 to 4 only ±0.5 ±5 ±6 ±7 mV Max A Noninverting input bias current ±1 ±3 ±4 ±5 µA Max A Noninverting input bias current drift ±25 ±30 nA/°C Max B Inverting input bias current ±8 ±40 ±45 ±50 µA Max A Inverting input bias current drift ±115 ±135 nA/°C Max B Inverting input bias current matching ±8 ±25 ±30 ±35 µA Max A INPUT CHARACTERISTICS Common-mode input range Each amplifier ±9.5 ±9 ±8.8 ±8.6 V Min A Common-mode rejection ratio Each amplifier 65 53 50 49 dB Min A Noninverting input resistance 500 || 2 k Ω || pF Typ C Inverting input resistance 50 Ω Typ C (1) Test levels: (A) 100% tested at +25°C. Over temperature limits set by characterization and simulation. (B) Limits set by characterization and simulation. (C) Typical value only for information. (2) Junction temperature = ambient for +25°C tested specifications. (3) Junction temperature = ambient at low temperature limit; junction temperature = ambient +23°C at high temperature limit for over temperature specifications. 4 Submit Documentation Feedback Copyright © 2007–2009, Texas Instruments Incorporated Product Folder Link(s): THS6204 |
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