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TLE4470GS датащи(PDF) 11 Page - Siemens Semiconductor Group |
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TLE4470GS датащи(HTML) 11 Page - Siemens Semiconductor Group |
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11 / 22 page ![]() TLE 4470 Semiconductor Group 11 1998-11-01 ESR of output capacitance R ESRQ2 –– 10 Ω at 10 kHz Disable Input DIS H-input voltage threshold V DISH 1.8 2.0 2.3 V – L-input voltage threshold V DISL 1.4 1.7 2.0 V Output 2 active H-input current I DISH –2 – 1 1 µA 2.3 V < V DIS <7 V L-input current I DISL –6 –2 – 0.5 µA 0 V < V DIS <1.4 V Reset Timing D and Output RQ Reset switching threshold V RT 4.5 4.65 4.8 V RADJ connected to GND Reset adjust threshold V RADJTH 1.25 1.35 1.45 V V Q1 > 3.5 V Reset output low voltage V RQL – 0.15 0.3 V R RQ = 10 kΩ external connected to V Q1; V Q1 ≥ 1V Reset high voltage V RQH 4.5 – – V – Reset pull up resistor R RQ 20 30 45 k Ω Internal connected to V Q1 Reset charging current I d 35 9 µA V D = 1 V Upper timing threshold V DU 1.5 1.8 2.2 V – Lower timing threshold V DL 0.3 0.4 0.55 V – Reset delay time t d 12 15 20 ms C D = 47 nF Reset reaction time t RR –0.5 2.0 µs C D = 47 nF Electrical Characteristics (cont’d) V I1 = VI2 = 14 V; VDIS < VDISL; – 40 °C < Tj < 150 °C; unless otherwise specified Parameter Symbol Limit Values Unit Test Condition min. typ. max. |
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