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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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LTC4253 датащи(PDF) 3 Page - Linear Technology |
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LTC4253 датащи(HTML) 3 Page - Linear Technology |
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3 / 34 page  LTC4253/LTC4253A 3 425353afe ELECTRICAL CHARACTERISTICS The l denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C. (Note 2) SYMBOL PARAMETER CONDITIONS LTC4253 LTC4253A UNITS MIN TYP MAX MIN TYP MAX VZ VIN – VEE Zener Voltage IIN = 2mA ● 11.5 13 14.5 11.5 13 14.5 V RZ VIN – VEE Zener Dynamic Impedance IIN = (2mA to 30mA) 5 5 Ω IIN VIN Supply Current UV = OV = 4V, VIN = (VZ – 0.3V) ● 0.8 2 1.1 2 mA VLKO VIN Undervoltage Lockout Coming Out of UVLO (Rising VIN) ● 9.2 11.5 9 10 V VLKH VIN Undervoltage Lockout Hysteresis ● 0.5 1 1.5 0.25 0.5 0.75 V VIH TTL Input High Voltage ● 22 V VIL TTL Input Low Voltage ● 0.8 0.8 V VHYST TTL Input Buffer Hysteresis 600 600 mV IRESET RESET Input Current VEE ≤ VRESET ≤ VIN ● ±0.1 ±10 ±0.1 ±10 μA IEN EN2, EN3 Input Current VEN = 4V VEN = 0V ● ● 60 120 ±0.1 180 ±10 60 120 ±0.1 180 ±10 μA μA VCB Circuit Breaker Current Limit Voltage VCB = (VSENSE – VEE) ● 40 50 60 45 50 55 mV VACL Analog Current Limit Voltage VACL = (VSENSE – VEE), SS = Open or 2.2V ● 80 100 120 mV VACL VCB Analog Current Limit Voltage Circuit Breaker Current Limit Voltage VACL = (VSENSE – VEE), SS = Open or 1.4V ● 1.05 1.20 1.38 V/V VFCL Fast Current Limit Voltage VFCL = (VSENSE – VEE) ● 150 200 300 150 200 300 mV VSS SS Voltage After End of SS Timing Cycle ● 2 2.2 2.4 1.25 1.4 1.55 V ISS SS Pin Current UV = OV = 4V, VSENSE = VEE, VSS = 0V (Sourcing) ● 12 22 32 16 28 40 μA UV = OV = 0V, VSENSE = VEE, VSS = 1V (Sinking) 28 28 mA RSS SS Output Impedance 100 50 kΩ VOS Analog Current Limit Offset Voltage 10 10 mV VACL + VOS VSS Ratio (VACL + VOS) to SS Voltage 0.05 0.05 V/V IGATE GATE Pin Output Current UV = OV = 4V, VSENSE = VEE, VGATE = 0V (Sourcing) ● 30 50 70 30 50 70 μA UV = OV = 4V, VSENSE – VEE = 0.15V, VGATE = 3V (Sinking) 17 17 mA UV = OV = 4V, VSENSE – VEE = 0.3V, VGATE = 1V (Sinking) 190 190 mA VGATE External MOSFET Gate Drive VGATE – VEE, IIN = 2mA ● 10 12 VZ 10 12 VZ V VGATEL Gate Low Threshold Before Gate Ramp Up 0.5 0.5 V VGATEH Gate High Threshold VGATEH = VIN – VGATE, for PWRGD1, PWRGD2, PWRGD3 Status 2.8 2.8 V VUVHI UV Pin Threshold HIGH UV Low to High ● 3.075 3.225 3.375 V VUVLO UV Pin Threshold LOW UV High to Low ● 2.775 2.925 3.075 V VUV UV Pin Threshold UV Low to High ● 3.05 3.08 3.11 V VUVHST UV Pin Hysteresis ● 230 300 350 292 324 356 mV mV VOVHI OV Pin Threshold HIGH OV Low to High ● 5.85 6.15 6.45 V VOVLO OV Pin Threshold LOW OV High to Low ● 5.55 5.85 6.15 V |
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