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LTC4253 датащи(PDF) 18 Page - Linear Technology |
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LTC4253 датащи(HTML) 18 Page - Linear Technology |
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18 / 34 page ![]() LTC4253/LTC4253A 18 425353afe APPLICATIONS INFORMATION POWER GOOD SEQUENCING After the initial TIMER cycle, GATE ramps up to turn on the external MOSFET which in turn pulls DRAIN low. When GATE is within 2.8V of VIN and DRAIN is lower than VDRNL,thepowergoodsequencestartswithPWRGD1pull- ing active low. This starts off a 5μA pull-up on the SQTIMER pin which ramps up until it reaches the 4V threshold then pulls low. When the SQTIMER pin floats, this delay tSQT is about 300μs. Connecting an external capacitor CSQ from SQTIMER to VEE modifies the delay to: t SQT = 4V • C SQ 5 μA (5) PWRGD2 asserts when EN2 goes high and PWRGD1 has asserted for more than one tSQT. When PWRGD2 suc- cessfully pulls low, SQTIMER ramps up on another delay cycle. PWRGD3 asserts when EN2 and EN3 go high and PWRGD2 has asserted for more than one tSQT. All three PWRGD signals are reset in UVLO, in UV condi- tion, if RESET is high or when CT charges up to 4V. In addition, PWRGD2 is reset by EN2 going low. PWRGD3 is reset by EN2 or EN3 going low. An overvoltage condition has no effect on the PWRGD flags. A 50μA current pulls each PWRGD pin high when reset. As power modules signal common are different from PWRGD, optoisolation is recommended. These three pins can sink an optodiode current. Figure 17 shows an NPN configuration for the PWRGD interface. A limiting base resistor should be used for each NPN and the module enable input should have protection from negative bias current. SOFT-START Soft-start is effective in limiting the inrush current during GATE start-up. Unduly long soft-start intervals can exceed the MOSFET’s SOA duration if powering-up into an active load. When the SS pin floats, an internal current source ramps SS from 0V to 2.2V in about 300μs (0V to 1.4V in about 200μs for the LTC4253A). Connecting an external capacitor, CSS, from SS to ground modifies the ramp to approximate an RC response of: VSS(t) ≈ VSS 1− e –t R SSC SS ⎛ ⎝ ⎜ ⎜ ⎞ ⎠ ⎟ ⎟ (6) An internal resistor divider (95k/5k for the LTC4253 and 47.5k/2.5k for the LTC4253A) scales VSS(t) down by 20 times to give the analog current limit threshold: V ACL (t) = V SS(t) 20 –V OS (7) This allows the inrush current to be limited to VACL(t)/RS. The offset voltage, VOS (10mV), ensures CSS is sufficiently discharged and the ACL amplifier is in current limit mode before GATE start-up. SS is discharged low during UVLO at VIN , UV, OV, during the initial timing cycle, a latched circuit breaker fault or the RESET pin going high. GATE GATE is pulled low to VEE under any of the following condi- tions: in UVLO, when RESET pulls high, in an undervoltage condition, in an overvoltage condition, during the initial timing cycle or a latched circuit breaker fault. When GATE turns on, a 50μA current source charges the MOSFET gate and any associated external capacitance. VIN limits the gate drive to no more than 14.5V. Gate-drain capacitance (CGD) feedthrough at the first abrupt application of power can cause a gate-source voltage sufficient to turn on the MOSFET. A unique circuit pulls GATE low with practically no usable voltage at VIN and eliminates current spikes at insertion. A large external gate-source capacitor is thus unnecessary for the purpose of compensating CGD. Instead, a smaller value (≥10nF) capacitor CC is adequate. CC also provides compensation for the analog current limit loop. GATE has two comparators: the GATE low comparator looks for <0.5V threshold prior to initial timing; the GATE high comparator looks for <2.8V relative to VIN and, together with DRAIN low comparator, sets PWRGD1 output during GATE start-up. |
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